透過您的圖書館登入
IP:3.139.104.214
  • 學位論文

背面具有鈍化層與局部接觸結構之創新型矽晶太陽能電池製作:初步研究

New Crystalline Silicon Solar Cell with Rear Passivation Layer and Local Rear Contact: Preliminary Study

指導教授 : 王立康
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


本實驗主要分為兩部分:以氧化鋁作為鈍化層的少數載子生命週期討論,及柵狀式電極結構太陽能電池討論。   在少數載子生命週期討論的部分,從固定退火時間不同的退火溫度,找出最佳的參數值為500℃ 15分鐘;並在過程中發現,氧化鋁膜鈍化層在退火完後,其效果會隨著時間而衰退,導致少數載子生命週期下降,藉由C-V的量測結果得到反轉電壓的偏移,證實氧化鋁膜的負電荷密度確實減少,並利用FTIR量測結果推測,是由於氫氧鍵所導致。   第二部分柵狀式電極結構的討論中,我們嘗試改變背部電極接觸的方式,尋求低成本及提高效率的可能性,在初步研究中,最佳數據為效率16.57%、F.F.為77.9%。

並列摘要


In this study, we focused on two different parts: observing minority carrier lifetime of Al2O3 passivation layer and new structure of solar cell with grid-shaped electrode.   The first part, we fixed annealing time with different annealing temperature, to find the best parameter value of minority carrier lifetime. The best result is Al2O3 thickness 10nm with annealing temperature 500℃ 15mins. In our experiment, we found that minority carrier lifetime would decay with time after annealing. We used C-V measurement to know that inversion voltage of Al2O3 had been displacement, and proved that the negative charge density had actually decayed. And we guessed that the decay of minority carrier lifetime of Al2O3 passivation layer was caused by hydroxide (-OH) bond by the result of FTIR measurement.   The second part, we changed the shape of backside electrode to try to get lower cost and higher efficiency solar cell. In our preliminary study, the best efficiency was 16.57% with fill factor (F.F.) 77.9%.

並列關鍵字

silicon solar cell Al2O3 passivation local contact

參考文獻


Photocell for Converting Solar Radiation into Electrical Power,” J. Appl. Phys.,
[3] W. Sockley, and H.J. Queisser, “Detailed Balance Limit of Efficiency of
[5] J. Zhao, A. Wang and M.A. Green, “High-efficiency PERL and PERT silicon solar
cells on FZ and MCZ substrates,” Solar Energy Materials and Solar Cells, pp. 429-435, 2001
[7] A.Morales-Acevedo, "The quantum collection efficiency of heavily doped emitters in silicon solar cells," Solar Cells, pp. 293-300, 1990

延伸閱讀