新穎簡易電漿佈植輔助製程應用於單元素二維材料合成及材料性質量測

Facile Synthesis and Measurements of Single-Elemental Two-Dimensional Materials via Plasma Implantation Assisted Process

蔡勖升(Hsu-Sheng Tsai)

指導教授 ： 闕郁倫 ； 梁正宏

國立清華大學/工學院/材料科學工程學系/博士(2015年)

https://doi.org/10.6843/NTHU.2015.00200

摘要

近年來，二維材料的合成與成長被廣泛研究，其目的在於取得可尺度化之高品質二維材料並且簡化製程。目前較成熟之二維材料取得技術中，機械剝離方法受限於材料尺度太小，而化學氣相沉積於金屬基板之二維材料必須以複雜且難以控制之轉移方法來達成元件製作的最終目的，此轉移方法過程中之化學溶液也會劣化二維材料品質，超高真空磊晶成長雖能達到高品質需求，但成長速度太慢且成本昂貴，其他特定合成方法由於製程參數門檻相當高(例如:超高溫高壓製程)，因此也不具實際應用潛力。本研究提出之電漿佈植輔助製程已成功被應用於合成三種單元素二維材料，其中包括碳化矽基板上合成多層石墨烯、矽鍺磊晶層上合成多層鍺烯以及磷化銦基板上合成多層紫磷烯。本製程幾乎克服上述大部分技術問題且僅分為兩部分，分別是電漿柨植及熱處理，本研究確認此電漿佈植輔助製程應用於合成單一元素二維材料之可行性並且初步得知其優越物理特性。

關鍵字

二維材料 ； 電漿

並列摘要

Synthesis and growth of two-dimensional (2D) materials have been extensively investigated in order to achieve high quality, scalability, and reduce the complexity of process in recent years. Mechanical exfoliation is a quite unpractical method owing to the scale limitation while chemical vapor deposition (CVD) on metal substrates must be combined with the manual transfer step, which seriously damages the materials for device applications. Ultrahigh vacuum (UHV) growth cannot accomplish the high production and reduce the cost of process. The conditions of some particular syntheses are quite difficult to be performed, thus they do not have potential for commercialization. This study announces that a facile synthesis method, so called plasma implantation assisted process, has been successfully utilized to synthesize three single-elemental 2D materials including multi-layered graphene on SiC, germanene on SiGe/Si, and violet phosphorene on InP. The process divided into plasma implantation and thermal treatment almost solves all of the issues mentioned above. In addition to demonstrate the feasibility of plasma implantation assisted process for synthesis of the single-elemental 2D materials, superior properties of these 2D materials were measured for seeking real applications.

並列關鍵字

two dimensional materials ； plasma

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