製備高開關比及高遷移率之石墨烯/氧化鋅接面場效電晶體

Fabrication of Graphene/Zinc Oxide Junction Field Effect Transistor with High On-off Ratio and High Mobility

曾柏元(Tseng, Po Yuan)

指導教授 ： 戴念華

國立清華大學/工學院/材料科學工程學系/碩士(2015年)

https://doi.org/10.6843/NTHU.2015.00216

摘要

石墨烯為一單層碳原子材料，具有特殊的光學與電學性質、優良的化學穩定性及高載子遷移率，這些獨特的性質，使石墨烯具備取代矽材料作為電子元件的潛力。本研究以化學氣相沉積系統於電解拋光銅箔上成長大面積的單層石墨烯，利用轉印技術，與原子層沉積所製備之氧化鋅薄膜形成石墨烯/氧化鋅接面場效電晶體。研究中使用拉曼光譜儀、光學顯微鏡探討化學氣相沉積法所成長的石墨烯及轉印至基板後的石墨烯之品質，並以紫外光-可見光光譜儀分析石墨烯的吸光率，及原子力顯微鏡量測單層石墨烯的厚度。另一方面，利用X光繞射儀、光激螢光光譜儀分析氧化鋅薄膜之基本物性，並探討不同原子層沉積溫度對氧化鋅薄膜的影響。在場效電晶體量測上，以多探針量測系統量測元件之電學性質，並探討不同成長溫度之氧化鋅對PN接面的影響。研究結果顯示，於電解拋光銅箔上成長之單層石墨烯，其厚度、吸光率與電洞(電子)遷移率分別為0.4-0.7 nm、3.35%、4638(5470) cm2/V∙s，而電洞及電子開關比分別為2.91與2.12。經由與氧化鋅薄膜複合型成PN接面後，最後所獲得之石墨烯/氧化鋅接面場效電晶體，其載子遷移率最高可達670 cm2/V∙s，開關比為2.87 × 105。

關鍵字

石墨烯 ； 接面場效電晶體 ； 高開關比及高遷移率

並列摘要

Graphene possesses excellent chemical stability, high carrier mobility, and unique optoelectrical properties at atomic level, which was considered as a promising material to replace Si in semiconductor industry. In this study, the chemical vapor deposition method was adopted to grow monolayer graphene on the electropolished Cu foil, followed by transferring the as-synthesized graphene to zinc oxide film, which was prepared by atomic layer deposition, forming graphene/zinc oxide junction field effect transistor. Graphene growth and transferring were characterized using Raman spectrum, optical microscopy; thickness and absorbance were measured using atomic force microscopy and UV-visable spectrometer, respectively. In other side, zinc oxide deposited at different temperature were also characterized using X-ray diffractometer and photoluminescence spectroscopy, investigating the effect of different growth temperature on zinc oxide. Electrical properties of the fabricated FETs were examined by a multi-probe system and the influences of irradiation of UV on electrical properties were also analyzed. The results indicate that the thickness, absorbance, and hole(electron) mobility of the graphene were 0.4-0.7 nm, 3.35%, and 4638(5470) cm2/V∙s, respectively. The current on-off ratio of hole and electron was 2.91 and 2.12, respectively. Graphene/zinc oxide junction field effect transistor was formed combining with graphene and zinc oxide film, showed high electron mobility of 670 cm2/V∙s and high current on-off ratio of 2.87 × 105.

並列關鍵字

Graphene ； JFET ； High on-off ratio and high mobility

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