本篇論文使用三元合金靶以直流真空濺鍍方式製備CIA前驅層,接著以固態源硒化法加熱。過程中我們使用不同的升溫速率、溫度、恆溫時間及硒粉量,最後我們探討不同升溫曲線下的薄膜特性。在實驗過程中我們發現,以背景真空壓力為5.8×10-7 torr製備CIA前驅層,並使用兩階段式硒化法,在第一階段停留10分鐘作為均質化,並在第二階段將溫度提升至525℃以及550℃,最後以XRD以及SEM分析下,發現以525℃恆溫時間為40分鐘的薄膜特性最好。最後我們以Al/AZO/i-ZnO/CdS/CIAS/Mo為結構製備成太陽電池元件,達到最好的轉換效率3.534%,開路電壓(Voc)和短路電流密度(Jsc)分別為0.46V與26.9mA/cm2,填充因子(F.F)則為0.29。
In this reserach we fabricated the Cu-In-Al precursor by DC sputter using Cu-In-Al alloy target, then we selenized the precursor by Se powder source. During the selenization process we tried difference heating rate, selenization temperature,during time and amount of Se powder to obtained CIAS thin-film. From the XRD and SEM alaysis we realized that the best CIAS asorber layer can be obtained with background pressure of 5.8×10-7 torr and two-step selenization process,we used 300℃ 10mins for first step reflowing precess and the second step the temperature heating to 525℃ for 40mins. Finally, we fabricated CIAS solar cells with Al/AZO/i-ZnO/CdS/CIAS/Mo structure.The best results showed an efficiency 3.534% with open voltage of 0.46V, short circuit current of 26.09 mA/cm2 and fill factor of 0.29.