- 學位論文
有機金屬濺鍍製程運用於銅銦鎵硒太陽電池製備之研究
The study of metal-organic-sputtering process for fabrication of Cu(In,Ga)Se2 solar cell
摘要
本研究主要藉由製程機台的設計與改裝，實踐有機金屬濺鍍製程，利用RF-Sputter沉積Cu-In-Ga( 44.70 : 38.12 : 17.14 at%)合金前驅薄膜，本研究利用EDS與拉曼光譜證實了外接攜出三甲基鎵氣體流量與薄膜中鎵元素的調整的正相關，接著利用固態硒粉加熱後進行硒化，過程中可以藉由改變升溫速率、溫度、持溫時間與硒粉量優化CIGS層，再利用化學浴沉積一層具透光性與覆蓋性的CdS，進而得到最佳化的主動層；此外，在我們的研究中，我們對三元前驅層硒化與四元薄膜退火進行比較，其中以三元前驅層硒化後的結構與特性上較為良好；最後在太陽電池的製作，我們以SLG/Mo/CIGS/CdS/i-ZnO/AZO/Al的結構去堆疊，其中硒化製程以500℃鋒值溫度、40分鐘持溫時間與50mg的硒粉得到最佳化太陽電池，其開路電壓(Voc)為0.16 V、短路電流(Jsc)為22.90 mA/cm2、填充因子(F.F)為0.29，效率為1.018 %。
並列摘要
In this study , we design the new process for fabrication of Cu(In,Ga)Se2 solar cell to prove the assumption of the metal-organic-sputtering process . Firstly , we use RF sputter to deposit the CuInGa thin film which can control the components of Ga as the function of TMGa flow with measurement of EDS and the Raman spectrum and then and carry out the selenization process with selenium powder by furnace . And then , we can optimize the selenization process by the parameters , such as rate of heating , top temperature , duration time and amount of selenium powder. Furthermore , we obtain the CdS buffer layer with good coverage and high transmittance by a chemical bath deposition way . In this study , we also compare the difference between CuInGa and Cu(In,Ga)Se2 thin film by different annealing process . And we find that , the selenized CuInGa thin film is better than the other on micro-structure . Finally , we fabricate the Cu(In,Ga)Se2 solar cell with SLG / Mo / CIGS /CdS / i-ZnO / AZO / Al structure . In selenization process , we optimize the parameters and show the efficiency of 1.018 % with an open circuit voltage of 0.16 V , short circuit current of 22.90 mA/cm2 and fill factor of 0.29 as the best cell in our study .