使用ICPCVD優化及分析多晶與非晶矽之矽氫薄膜與矽氫薄膜太陽能電池製作

Optimization and analysis of silicon thin-film for SPA solar cell by ICPCVD

李俊毅(Li, Jyun Yi)

指導教授 ： 曾孝明 ； 黃惠良

國立清華大學/電機資訊學院/電子工程研究所/碩士(2015年)

摘要

在此項研究中，我們使用低感應天線高密度電漿輔助化學氣相沉積系統，製備出多晶矽-氫薄膜以及非晶矽薄膜。利用這些多晶矽以及非晶矽不同能隙的吸收層特性，創造出SPA結構的太陽能電池，也量測出此種太陽能電池的光伏特性。我們在這項研究中，控制多晶矽薄膜的各項參數，例如：壓力、功率、氣體流量以及厚度，由這些調變來獲取較佳的薄膜特性。我們所選用的多晶N參雜薄膜層導電度為1.553Ω-1cm-1，此為經過調變過後得到的最佳導電度，而多晶矽-氫薄膜在高瓦數的功率及調整氣體壓力後結晶率達到83.72%。我們也嘗試增加多晶矽-氫吸收層的厚度，針對不同厚度的多晶矽-氫吸收層作出分析，希望達到更高的效率。完成多晶矽薄膜層厚，我們與交通大學合作，交由他們完成剩下的非晶矽薄膜層，完成整個太陽能電池後效率達到3.243%，再經由熱退火製程便能使效率達到4.418%。

關鍵字

太陽電池 ； 矽氫薄膜

並列摘要

In this research work, we fabricated a-Si:H and poly-Si thin-films by using inductively coupled plasma enhanced chemical vapor deposition system with low inductance antenna. The a-Si:H and poly-Si thin-films have different band gaps for absorber layers to get the full photovoltaic potential of both. We controlled the parameters such as pressure, power, flow rate, and thickness. These modulations can obtain better property. The conductivity of poly-Si n layer was 1.553Ω-1cm-1. It was the best n layer in our research. The crystalline volume fraction of poly-Si i layer was 83.72%, it can be obtained by high power and high pressure. We tried to change the thickness of poly-Si i layer and analyzed the results of these solar cells. Amorphous layers were deposited in NCTU, and then we finished the SPA solar cell. The efficiency can achieve 3.243%, after annealing in hydrogen, the efficiency of this solar cell increased to 4.418%.

並列關鍵字

Solar cell ； Si:H thin-film ； SPA

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