- 學位論文
邊緣終結保護結構-反摻雜接面終結延伸於高電壓元件之研發
An Edge Termination Technique for High-Voltage Devices in 4H-SiC-Counter-Doped Junction Termination Extension
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- 蔡明蒼（2011）。可完全相容於邏輯製程之高壓接點閘極金氧半場效電晶體〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-1908201112580493
- 莊如慧（2020）。電子封裝高銀合金線材與帶材通電流及退火之晶粒結構研究〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU202003338
- Chen, J. H. (2021). 鄰近同心金屬-絕緣層-半導體穿隧二極體耦合效應及開路電壓感測之應用 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU202101334
- 蘇祐萱（2015）。Characterization of Trench-Gate MOSFET in 4H-SiC Using Charge-Pumping Technique〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-1802201617063726
- Cho, H. Y. (2010). High-Performance Slow-Wave Transmission lines and Improved De-embedding Techniques [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2010.00067