CMOS-MEMS熱電式紅外線感測器設計與實現

本研究將以TSMC CMOS 0.35µm 2P4M標準製程當作製作平台，製作一CMOS-MEMS熱電式紅外線感測器，著重於熱電偶與吸收層結構設計，並提出利用特殊的蝕刻孔道排列方式，切斷原有的熱傳路徑，並使熱依照設計方向進行熱傳改變熱傳距離，在相同的感測器尺寸、相同的材料、相同的雜訊大小下增加感測器的響應度，期望透過結構的設計有效提升感測器的訊雜比，並設計一對照組以驗證設計概念。設計過程中透過理論分析與ANSYS有限元素模擬軟體協助計算響應度、等下雜訊電壓等參數，並將晶片透過後製程製作出結構，以實現一高靈敏度熱電式紅外線感測器。

關鍵字

CMOS-MEMS ；熱電式紅外線感測器；熱電效應

並列摘要

This study implements a thermoelectric infrared sensor using TSMC 0.35µm 2P4M standard CMOS process to discuss the distribution of releasing holes affect the performance of the sensor. In MEMS device, releasing holes design is related to the time takes in the releasing process. However, the distribution of the releasing holes may affect the heat transfer path and changed the sensor performance. In this study, a CMOS-MEMS thermoelectric infrared sensor with strip-via releasing holes is designed for high responsivity when operating at low pressure and an existing design as comparison. The discrete releasing holes spread on the absorber membrane as existing design. Strip-via releasing holes split the absorber membrane into serpentine shape as proposed type. The thermocouples are a composite of two poly structure connected by metal1 and patterned along with the absorber membrane. In comparison, the design with strip-via releasing holes will increase responsivity 6.2 times faster than the existing design at low pressure. Moreover, the proposed design has the responsivity of 146.4VW-1, detectivity of 0.29*108cmHz0.5W-1 at 25mtorr and response time of 25.9ms.

並列關鍵字

CMOS-MEMS ； thermoelectric ； infrared sensor

參考文獻

[1]R. P. Feynman, “There's plenty of room at the bottom,” Journal of Microelectromechanical Systems, vol. 1, pp. 60-66, 1992.

[4]Texas Instruments, Inc., www.ti.com

[5] Melexis Microelectronic integrated systems, www.melexis.com

[7]J. H. Smith, S. Montague, J. J. Sniegowski, J. R. Murray, and P. J. McWhorter,” Embedded micromechanical devices for the monolithic integration of MEMS with CMOS,” Int. Electron Devices Meeting, Washington, DC, Dec., 1995.

[11]Antoni Rogalski, "Infrared detectors: status and trends," Progress in quantum electronics, vol.27, 2003, pp. 59-210.

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CMOS-MEMS熱電式紅外線感測器設計與實現

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