以CMOS-MEMS製程結合高分子填充技術發展一可調感測範圍/靈敏度之電容式觸覺感測器

A Tunable Range/Sensitivity CMOS-MEMS Capacitive Tactile Sensor with Polymer Fill-In Technique

劉育嘉(Yu-Chia Liu)

指導教授 ： 方維倫

國立清華大學/工學院/奈米工程與微系統研究所/碩士(2009年)

https://doi.org/10.6843/NTHU.2009.00433

摘要

本研究欲利用TSMC 0.35μm 2P4M標準CMOS製程平台以及自行開發相容於CMOS後製程，設計出電容式觸覺感測晶片，透過不同堆疊層設計出兩種不同堆疊型態的感測器，並將高分子材料結合CMOS後製程當中，將觸覺感測器直接封裝。期望在相同感測面積下能有較高感測電容值，並藉由不同比例之高分子形成不同靈敏度/受力範圍之觸覺感測器，搭配感測電路將訊號讀出，最後歸納出不同型態感測器的性能。

關鍵字

CMOS-MEMS ； 電容式觸覺感測器 ； 高分子填充技術 ； 感測電路

並列摘要

In this study, a capacitive type CMOS-MEMS tactile-sensor containing a sensing gap filled with polymer. The fabrication process allows the changing of polymer material easily. Thus, the characteristics (sensing range, sensitivity) of the CMOS-MEMS tactile-sensor can be easily tuned by varying the polymer material. In application, the tactile-sensor and sensing circuits have been designed and implemented using (1) TSMC 0.35μm 2P4M CMOS process, and (2) in-house post-CMOS releasing and polymer-filling processes. Measurement results demonstrate the sensitivity and sensing range of CMOS-MEMS tactile-sensor are easily tuned by changing the polymer materials.

並列關鍵字

CMOS-MEMS ； Capacitive tactile sensor ； Polymer fill-in technique ； Sensing circuit

參考文獻

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