本研究主要分成三部分。(一)利用金屬氣相真空電弧佈植銅晶種層在a-TaN/Si基材上,再經由後續無電鍍銅製程沈積銅膜。(二)利用九十度過濾式陰極電弧電漿沈積銅膜。(三)結合九十度過濾式陰極電弧沈積銅膜和氣相-固相反應合成氧化銅奈米棒。 佈植銅晶種的晶粒大小和方位與佈植能量和劑量息息相關。而其大小和方位也深深影響後續無電鍍銅膜與a-TaN擴散阻障層之間的附著性及在孔洞填洞能力的表現。佈植能量30 kV,劑量1 x 1017 cm-2的銅晶種層在後續無電鍍銅膜的附著力及在0.2微米孔洞填充能力有良好的表現。 利用九十度過濾式陰極電弧電漿沈積的銅膜的晶粒取向、附著力及在0.2微米孔洞填充能力在本論文也有詳細探討;並結合後續控制溫度與氣氛的氣相-固相反應合成氧化銅奈米棒。成功的合成劑量比1:1的氧化銅雙晶奈米棒。氧化銅奈米棒經過量測具有3.94 V/μm的低起始電壓及大約3600的誘場發射常數(field-enhancement factor)。證實所合成奈米棒適合做為場發射材料。
This thesis is consisted of three parts, (1) Implantation of Cu seed layer on a-TaN/Si assembly using metal vapor vacuum arc ion implanter followed by electroless Cu plating, (2) Deposition of Cu films using 90o-bend filtered cathodic arc plasma system, and (3) Synthesis of CuO nanorods using 90o-bend filtered cathodic-arc for Cu deposition and vapor-solid reaction. Various implantation energies and dosages affect the grain size and orientation of the implanted Cu seed layer and the corresponding adhesion strength to the diffusion barrier layer, a-TaN, and gap-filling capability. As a result, electroless-plated Cu films exhibit a higher adhesion strength to a-TaN and an excellent gap-filling capability in 0.2-μm-width via under the accelerating voltage of 30 kV with dosage of 1 x 1017 cm-2. The orientation, adhesion strength and gap-filling capability of Cu films deposited by 90o-bend filtered cathodic arc plasma system are also discussed in this thesis. Stoichiometrically bicrystal CuO nanorods are synthesized by the combination of filtered cathodic-arc Cu deposition and vapor-solid reaction. CuO nanorods exhibit a lower turn-on field of 3.94 V/μm and a field-enhancement factor of ~3600, indicating that CuO nanorods are suitable for field emitters.