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  • 學位論文

以真空電弧合成銅基積體元件的結構鑑定和物理特性之研究

Structural Characterization and Physical Properties of Copper-based Integrated Device Synthesized by Vacuum Arc Discharge

指導教授 : 施漢章
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摘要


本研究主要分成三部分。(一)利用金屬氣相真空電弧佈植銅晶種層在a-TaN/Si基材上,再經由後續無電鍍銅製程沈積銅膜。(二)利用九十度過濾式陰極電弧電漿沈積銅膜。(三)結合九十度過濾式陰極電弧沈積銅膜和氣相-固相反應合成氧化銅奈米棒。 佈植銅晶種的晶粒大小和方位與佈植能量和劑量息息相關。而其大小和方位也深深影響後續無電鍍銅膜與a-TaN擴散阻障層之間的附著性及在孔洞填洞能力的表現。佈植能量30 kV,劑量1 x 1017 cm-2的銅晶種層在後續無電鍍銅膜的附著力及在0.2微米孔洞填充能力有良好的表現。 利用九十度過濾式陰極電弧電漿沈積的銅膜的晶粒取向、附著力及在0.2微米孔洞填充能力在本論文也有詳細探討;並結合後續控制溫度與氣氛的氣相-固相反應合成氧化銅奈米棒。成功的合成劑量比1:1的氧化銅雙晶奈米棒。氧化銅奈米棒經過量測具有3.94 V/μm的低起始電壓及大約3600的誘場發射常數(field-enhancement factor)。證實所合成奈米棒適合做為場發射材料。

並列摘要


This thesis is consisted of three parts, (1) Implantation of Cu seed layer on a-TaN/Si assembly using metal vapor vacuum arc ion implanter followed by electroless Cu plating, (2) Deposition of Cu films using 90o-bend filtered cathodic arc plasma system, and (3) Synthesis of CuO nanorods using 90o-bend filtered cathodic-arc for Cu deposition and vapor-solid reaction. Various implantation energies and dosages affect the grain size and orientation of the implanted Cu seed layer and the corresponding adhesion strength to the diffusion barrier layer, a-TaN, and gap-filling capability. As a result, electroless-plated Cu films exhibit a higher adhesion strength to a-TaN and an excellent gap-filling capability in 0.2-μm-width via under the accelerating voltage of 30 kV with dosage of 1 x 1017 cm-2. The orientation, adhesion strength and gap-filling capability of Cu films deposited by 90o-bend filtered cathodic arc plasma system are also discussed in this thesis. Stoichiometrically bicrystal CuO nanorods are synthesized by the combination of filtered cathodic-arc Cu deposition and vapor-solid reaction. CuO nanorods exhibit a lower turn-on field of 3.94 V/μm and a field-enhancement factor of ~3600, indicating that CuO nanorods are suitable for field emitters.

參考文獻


1. C.S. Yang, Y.H. Yu, K.M. Lee, H.J. Lee, C.K. Choi “Investigation of Low Dielectric Carbon-doped Silicon Oxide Films Prepared by PECVD Using Methyltrimethoxysilane Precursor “Thin Solid Films 506, 50-54 (2006).
2. S.B. Jung, H.H. Park “Improvement of Electrical Properties Silica Thin Films by of Surfactant-templated Mesoporous Plasma Treatment” Thin Solid Films 506, 360-363 (2006).
3. Y. Shacham-Diamandad, S. Lopatin, “Integrated Electroless Metallization for ULSI” Electrochim. Acta 44, 3639-3649 (1999).
4. X.W. Liu, J.H. Lin, W.J. Jong, H.C. Shih, “The Effect of Pressure Control on a Thermally Stable a-C:N Thin Film with Low Dielectric Constant by Electron Cyclotron Resonance-plasma” Thin Solid Films 409, 178-184 (2002).
5. S. Lakshminarayanan, J. Steigerwald, D.T. Price, M. Bourgeois, T.P. Chow, “Contact and Via Structures with Copper Interconnects Fabricate dusing Dual Damascene Technology” IEEE Electron Device Letters 15, 307-309 (1994).

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