碲化鎘與銻化銦介面成分之研究

Concentration Measurement of Cd and Te in the Interface of CdTe/InSb Using Multiple-Wave X-Ray Diffraction

薛秋美(Chiu-Mei Shueh)

指導教授 ： 張石麟

國立清華大學/理學院/物理學系/碩士(2006年)

摘要

本實驗主要是測量基底與薄膜介面成分的組成,
利用X-ray三光複繞射測量薄膜CdTe與基底InSb在能量位於Cd L_{III}edge,
即共振能量附近的相位變化,
並選取一系列沿著垂直介面方向的動量變化q作為主級繞射,
觀察不同深度(不同q值)相對於能量的共振相位變化,
再比較利用結構因子所計算出的理論三光相位與實驗數值,
進而決定出介面混合的比例。

關鍵字

三光相位 ； 介面 ； 共振繞射

並列摘要

The concentration of Cd and Te in the interface of CdTe/InSb is measured by X-ray three-beam diffraction (002/-3-11) under resonant conditions.
Because of anomalous scattering effects,
phase shift due to resonance becomes much more appreciable in affecting the diffraction intensity.
In this study we choose different momentum transfer qr normal to the interface and measure phase shift for each qr around the resonant energy, i.e., the Cd L_{III} edge.
Comparsion between the experiment data and the theoretical analysis for the crystallographic phases of the structure-factor triplet leads to successful determination of Cd concertation in the interface region.

並列關鍵字

CdTe/InSb

參考文獻

[1] S.L. Chang, in Special Topics on X-ray Diffraction ,

[2] J. A. Nielsen , and D. McMorrow in Elements of Modern

1065-1072 (1988)

[4] S.-L. Chang , C.H. Chao, Y.S. Huang, Y.C. Jean,

and H.S. Sheu, F.J. Liang, H.C. Chien, C.K. Chen,