氮化銦陰離子感測器

近幾年來因為低能隙（0.7電子伏特）的關係，氮化銦半導體被廣泛應用於太陽能電池上。最近，氮化銦表面附近電荷堆積這個現象被實驗證明及其造成表面為帶正電的表面狀態。依化學的角度來看，表面正電荷可視為酸基，會吸引帶電子的鹼基。基於此項特質，本論文使用氮化銦半導體做為陰離子感測器，並針對酸、鹼、鹽三種水溶液進行感測特性的分析。結果顯示氮化銦表面在此三種水溶液中皆會產生負電位。更近一步的分析顯示所有的反應行為只跟表面的庫倫作用力有關，並與文獻中的模型相符。另外，未經處理的氮化銦氧化物會減弱表面正電荷造成的電場，進而影響其靈敏度和穩定性。此研究結果發現以氮化銦為基底的陰離子感測器具有以下的優勢；第一，氮化銦陰離子感測器具有極高的再現性。第二，選擇性只與表面的庫倫作用力有關。第三，反應較迅速。

關鍵字

氮化銦；陰離子；感測器

並列摘要

InN is a remarkable material for solar cell application in the last few years because the energy band gap of InN is about 0.7 V. Recently, the large intrinsic surface charge accumulation near InN surface is discovered and this phenomenon results in the positively charged surface states. From the chemical of view, such surface states act as the acidic ligands which can adsorb basic ligands. Based on this property, this thesis investigated the sensing property of InN based anion sensor for the acid, salt and base solutions for the first time. The results show that there is negative surface potential induced in InN when InN based anion sensor dipping in these solutions. In fact, the sensing responses only depend on the Coulomb interaction on the InN/liquid interface and consist with the charge and potential consist model obviously. Moreover, the charge and discharge behaviors of InN based anion sensor are the same with the capacitor. In addition, the native oxide on the InN surface affects the sensitivity and stability due to the weaker electric attraction. The most important of all, InN has the excellent potential for the anion sensor applications for three reasons. First, InN based anion sensor has high repeatability. Second, the selectivity depends on the Coulomb interaction on the surface, not the lipophilicity. Third, the response is faster.

並列關鍵字

InN ； Anion ； Sensor

參考文獻

[1] H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Sttutz, “Surface charge accumulation of InN films grown by molecular-beam epitaxy,” Appl. Phys. Lett. Vol, 82, pp.1736-1738, 2004

[2] H. Lu, W. J. Schaff, and L. F. Eastman, ”Surface chemical modification of InN for sensor applications,” Appl. Phys. Lett, vol. 96, pp.3577-3579, 2004

[4] P. Bergveld, “Development of an ion-sensitive solid-state device for neurophysiological measurements”, IEEE Trans. Biomed. Eng. vol. 17, pp.70-71, 1970

[5] J.C. Chou, and C.Y. Weng, “Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET,” Materials Chemistry and Physics, vol. 71, pp. 120–124, 2001

[6] J. C. Chou, and C. N. Hsiao, “Comparison of the pH sensitivity of different surfaces on tantalum pentoxide,” Sensors and Actuators B, vol. 65, pp.237–238, 2000

國際替代計量

氮化銦陰離子感測器

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