氮氧化物氣體感測器研製與特性分析

Development and Characteristic Analysis of Nitrogen Oxide Gas Sensor

洪瑞華(Ray-Hua Horng) ； 澹台富國(Fu-Gow Tarntair) ； 李維中(Wei-Chung Lee)

《科儀新知》 230期 (2022/03) Pp. 21-32

摘要

利用有機金屬化學氣相沉積系統生長氧化鎵鋅（ZnGaO, ZGO）單晶薄膜在藍寶石基板上，並將此薄膜應用於氣體感測器。由於此三元氧化物半導體具有較寬的能隙（～5.2 eV）且表面上具有較多的氧空缺，故製作成元件後在可見光範圍操作較為穩定，而表面上的氧空缺會使氧氣吸附，在感測氣體時與待測氣體產生交互作用。相較於相同濃度之其他氣體，ZGO薄膜對於氮氧化物（NO_x）氣體的響應度較高，故以一氧化氮（NO）作為測量氣體。本文同時也分析氣體感測的機制，我們分別探討了薄膜含鎵量不同對於氣體響應度的影響並探討氣感反應之特性與機制。

並列摘要

Zinc gallium oxide (ZnGaO, ZGO) single crystal epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition system and applied to gas sensors. Since this ternary oxide semiconductor has a wide energy gap (~5.2 eV) and more oxygen vacancies on the surface. It is more stable in the visible light range after fabrication. Furthermore, the surface will absorb the oxygen due to the the oxygen vacancies. It will interact with the gas as injecting sensing the gas. Compared with other gases with the same concentration, the ZGO film has higher responsivity to nitrogen oxide (NO_x) gas, so nitrogen monoxide (NO) is used as the measurement gas. This paper also analyzes the mechanism of gas sensing. The influence of different gallium content of the ZGO on the gas responsivity will be discussed. Moreover, the characteristics and mechanism of the gas sensing reaction will also be studied in details.