以化學氣相沉積法在矽(100)上成長高指向立方碳化矽之研究

Growth of Highly Oriented 3C-SiC on Si(100) by Chemical Vapor Deposition

陳建成(Chien-Cheng Chen)

指導教授 ： 黃振昌

國立清華大學/工學院/材料科學工程學系/碩士(2008年)

摘要

碳化矽(Silicon Carbide)具有寬能隙、高崩潰電壓、高熱傳導係數及高電子漂移速率等優越的性質，在電子元件應用上是相當有潛力的材料，本研究利用射頻感應加熱化學氣相沈積系統 (Radio Frequency Chemical Vapor Deposition System)，採三階段成長法，以氫氣為載流氣體，通入矽甲烷、丙烷反應氣體，成功在Si(100)基材上沈積高指向性立方晶型碳化矽(3C-SiC)薄膜。三階段成長分為氫清潔、丙烷碳化與薄膜成長，首先在攝氏900度下，通入氫氣，去除原生氧化層，接著急速升溫至攝氏1250度，丙烷裂解後，碳原子覆蓋在矽基板上，並碳化試片表面矽原子，形成SiC緩衝層，再升溫到攝氏1380度，成長立方碳化矽。由AES、AFM、SEM、TEM、XPS與XRD等儀器分析，證明所成長之薄膜結構為高指向性織構。

關鍵字

立方碳化矽 ； 化學氣相沉積法 ； 高指向

並列摘要

Silicon carbide (SiC) is a promising material in the electronic device application due to its wide band gap, high breakdown voltage, high conductivity and high electron mobility. In this thesis, we have successfully grown highly oriented 3C-SiC thin films on Si(100) substrates by Radio Frequency Chemical Vapor Deposition system (RFCVD), utilizing the three-step growth method in a SiH4-C3H8-H2 mixed gas. The three-step growth consists of hydrogen cleaning, propane carburization and SiC growth. At first, H2 is introduced at 900℃ to remove native oxide. The temperature is then ramped up rapidly to 1250℃ to decompose C3H8. The C atoms cracked from C3H8 are deposited on Si(100) and then form a SiC buffer layer at the surface. At last, the temperature is ramped up to 1380℃ in a mixed gas of SiH4-C3H8-H2 for 3C-SiC growth. The as-grown 3C-SiC thin film is highly oriented, characterized by AES、AFM、SEM、TEM、XPS and XRD analyses.

並列關鍵字

3C-SiC ； CVD

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