金屬(Al)/絕緣層/矽(Si)電容器使用氧化鈰、氧化杉和氧化鉿之電性分析

The Electrical Properties of Metal-Insulator-Silicon Capacitors using CeO2 ,Sm2O3 and HfO2 Gate Dielectrics.

潘信良(Sin-Liang Pan)

指導教授 ： 黃惠良

國立清華大學/電機資訊學院/積體電路設計產業研發碩士專班/碩士(2007年)

https://doi.org/10.6843/NTHU.2007.00392

摘要

本篇論文以氧化鈰(CeO2)、氧化杉(Sm2O3)和氧化鉿(HfO2)在金氧半電容器上作為閘極絕緣層來製作以及研究。分別使用射頻磁控式濺鍍和原子層化學沉積技術來沉積閘極絕緣層。
氧化鈰(CeO2)薄膜在X光繞射儀的分析上於快速高溫退火之前就已經結晶，在電子顯微鏡的分析上也可以清楚的看到結晶以及氧化鈰(CeO2)薄膜與矽晶圓之間有產生一層界面層。
傳導機制分析之中，在Al/CeO2/p-Si結構於高溫(>350K)低電場(0.36~1.56 MV/cm)時，產生蕭特基發射機制，然而於高溫(500K)高電場(1.69~2.66 MV/cm)時，產生普爾-法蘭克發射機制。在Al/Sm2O3/p-Si結構於高電場(1.96~4 MV/cm)時，產生蕭特基發射機制。在Al/HfO2/p-Si結構於低電場(0.16~2.89 MV/cm)時，產生蕭特基發射機制。實驗結果中，可以得到能障高度，於Al/CeO2是0.478 eV 在電場1.53 MV/cm，於Al/Sm2O3是0.362 eV在電場3.1 MV/cm，於Al/HfO2是0.278 eV在電場1.6 MV/cm。不同溫度中的韋伯斜率於氧化鈰(CeO2)為6.5，於氧化杉(Sm2O3)為7.1，於氧化鉿(HfO2)為3.3，而薄膜在QBD63%的活化能方面，於氧化鈰(CeO2)為0.37 eV，於氧化杉(Sm2O3)為0.346 eV，於氧化鉿(HfO2)為0.143eV。

關鍵字

氧化鈰 ； 氧化杉 ； 氧化鉿

並列摘要

In this thesis, Metal-Insulator-Si (MIS) capacitors with CeO2, Sm2O3 and HfO2 gate dielectrics were fabricated and investigated. The CeO2, Sm2O3 and HfO2 gate dielectrics were deposited by RF magnetron sputtering and atomic layer chemical vapor deposition (ALD), respectively.
The XRD analysis revealed that CeO2 thin films already were polycrystalline at as-deposited, TEM analysis revealed that an interface layer (IL) was formed between the high-κ film (CeO2) and Si substrate.
The dominant conduction mechanism of Al/CeO2/p-Si structure at high temperature (>350K) is Schottky emission in low electric fields (0.36~1.56 MV/cm) and at high temperature (500K) is Poole-Frenkel emission in high electric fields (1.69~2.66 MV/cm). The dominant mechanism of Al/Sm2O3/p-Si structure at high electric fields (1.96~4 MV/cm) is Schottky emission. The dominant mechanism of Al/HfO2/p-Si structure at low electric fields (0.16~2.89 MV/cm) is Schottky emission.
Experimental results showed that the barrier height of Al/CeO2 is 0.478 eV at 1.53 MV/cm, and that of Al/Sm2O3 is 0.362 eV at 3.1 MV/cm and that of Al/HfO2 is 0.278 eV at 1.6 MV/cm. The extracted Weibull slope for different temperatures (25℃, 85℃, 125℃) is found to be 6.5 in CeO2 thin film, 7.1 in Sm2O3 thin film and 3.3 in HfO2 thin film. The activation energy of CeO2 thin film calculated from the QBD63% plots was about 0.37 eV, and it was about 0.346 eV for Sm2O3 thin film, and 0.143 eV for HfO2 thin film.

並列關鍵字

CeO2 ； Sm2O3 ； HfO2 ； Metal-Insulator-Silicon

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