半導體製造業創新發明原則與矛盾矩陣雛型建立－以化學機械研磨為例

Invention Principles and Contradiction Matrix for Semiconductor Manufacturing Industry : Chemical Mechanical Polishing

游邦彥(Yu, Pang Yen)

指導教授 ： 許棟樑

國立清華大學/工學院/工業工程與工程管理學系/碩士(2007年)

https://doi.org/10.6843/NTHU.2007.00431

摘要

傳統的39工程參數、40發明原則與矛盾矩陣並不見得適用所有產業。從邏輯判斷看來，針對不同的特定領域，由於其產品或設備特性可能相差甚大，其矛盾矩陣之參數與發明原則應該有所不同，故原矛盾矩陣與發明原則應有許多不適用於半導體產業之處。本論文參照Altshuller之研究方法，建立針對半導體產業設備及製程建立一套適用之工程參數、矛盾矩陣、與發明原則，採取下列策略來修訂原有矛盾矩陣與發明原則以建立適於半導體設備與製程之發明原則： 1) 以單一製程及其設備為對象，可以大幅減少所需分析的專利數目。隨後再逐步擴充至其他半導體製程與設備； 2) 增訂原有的工程參數，使適合半導體產業之特性； 3) 增加、修訂發明原則； 4) 整理參數矛盾所對應的發明原則。
藉由研讀化學機械研磨(CMP)製程與設備相關專利的內容，歸納出適用於CMP領域相關的工程參數、發明原則與改良/更新TRIZ中之矛盾矩陣，來幫助解釋化學機械研磨製程CMP中的發明性問題。其所產出的改良式矛盾矩陣與發明原則可以作為CMP機台與製程，系統性創新改善之觸發解，提供解決問題的引發點子。本研究的貢獻含：1) 衡量了傳統TRIZ矛盾矩陣在CMP問題的適用性； 2) 重新修訂工程參數，使其適用於化學機械研磨製程與設備； 3) 增加三個、修訂兩個發明原則； 4) 找出新的參數與發明原則對應關係，建立較適用於CMP相關的矛盾矩陣； 5) 模式化參數與發明原則之對應關係，以問題陣列及解答陣列形成三維陣列(Triplet) 來充分表達任一發明特徵，有利於日後進一步以數理方法與電腦計算來分析矛盾矩陣與發明原則。

關鍵字

萃思 ； 矛盾矩陣 ； 化學機械研磨 ； 發明原則 ； 半導體產業

並列摘要

39 technique parameters and 40 inventive principles of the classical Contradiction Matrix may not be effectively when applying to all industries. In terms of logical judgment, the characteristics of products and equipment may differ from different field obviously. The classical Contradiction Matrix and the inventive principles may be unsuitable for the semiconductor industry. This essay follow Altshuller’s method to establish a set of parameters、Contradiction Matrix and inventive principles focusing on the equipment and manufacturing process of semiconductor industry, and take on the following strategies to revise the original Contradiction Matrix and inventive principles for the equipment and manufacturing process of semiconductor industry.

First of all, focusing on the single manufacturing process and equipment, then expand to other equipment and manufacturing process step by step. Second, revise and augment the original industry parameters to be suitable for the characteristics of the IC industry. Third, increase and revise the inventive principles. Fourth, coordinate the inventive principles responding to the Contradiction Matrix.

By studying the relevant patents of CMP , we can induce the parameters、inventive principles and revised/updated Contradiction Matrix from TRIZ that are suitable for the CMP industry, and help to interpret the inventive problems of CMP. The improved Contradiction Matrix can not only be the solution triggers for CMP equipment and process, but also provide problem resolving with inspirational ideas.

The contribution of this research includes: 1. Measure the accuracy of the classical TRIZ Contradiction Matrix for CMP problems.2. Revise the industry parameters to fit CMP process and equipment. 3. Increase three inventive principles and revise two of them. 4. Find new relationship between parameters and the inventive principles to fit CMP problems. 5. Use a Triplet to represent an inventive case with problem duplet and solution array. That would be beneficial to analyze with mathematical methods and computation for further studying

參考文獻

【6】 劉志成，「TRIZ 方法改良與綠色創新設計方法之研究」，國立成功大學機械工程學系博士論文，中華民國92 年1 月(2003/01)

【11】 劉宜旺，「從產品生命週期階段觀點提出改良的TRIZ 為基礎之綠色創新設計方法研究」，國立成功大學機械工程學系博士論文, (2005/06)

【15】 J.Y. Choi, H.J. Kim, J.H. Park, S. Chung, H. Jeong and M. Kinoshita, “A Study on Manufacture and Evaluation of CMP Pad with Micro-structure”, 7th International Symposium on Advances in Abrasive Technology, 2004.

【23】 Yuan, Y. and M. J. Shaw, “Induction of fuzzy decision trees”, Fuzzy Sets and Systems, 69, pp.125-139, 1995

【24】 許棟樑、陳瑞陽，「模糊客訴問題的原因分析及回饋系統」，國立清華大學工業工程與工程管理研究所博士論文，pp.17-20，2006