- 學位論文
Hydrothermal Route to the Preparation of Diffusion Barriers on Te-based Thermoelements
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摘要
The overall performance of a thermoelectric device partially relies on the structural integrity of its diffusion barrier, preventing solder from reacting with the thermoelements. Currently, electroless nickel is the standard industrial choice, but the fact that the nickel barrier is depleted at two fronts, forming both NiTe and Ni3Sn4 phases, is troublesome. A novel hydrothermal process in the preparation of α-CuTe diffusion barrier, based on simple displacement chemistry, is found to be effective in suppressing the growth of SnTe intermetallics only when an excess of Cu6Sn5 precipitates accumulate near the reaction interface. The fast diffusion of copper in bismuth telluride prevents the formation of a stable layered barrier. Nonetheless, the proposed hydrothermal method could be used to deposit a seed layer on elemental tellurium prior to electroless nickel plating
並列摘要
熱電元件的整體性能與防止焊錫與熱電材料發生反應的擴散阻絕層之結構完整性密切相關。雖然無電鍍鎳是目前業界製作熱電模組之首選材料，但是無可避免在無電鍍鎳兩端會因焊接反應以及後續操作情況下逐漸被消耗形成NiTe 與Ni3Sn4介金屬化合物，最後將進一步影響到元件的效能。本研究根據簡單置換化學反應所開發的水熱法可成功製備α-CuTe擴散阻絕層。若在焊錫中具有過量的Cu6Sn5析出物存在於焊接反應界面附近將可有效的抑制SnTe介金屬化合物的生成。然而，由於銅在碲化鉍材料的快速擴散反應，因此無法在焊錫/碲化鉍反應界面形成同樣的層狀結構。儘管如此，本研究所提出利用水熱法製備的α-CuTe層將可用來當作在沈積無電鍍鎳前於碲元素基材上所沉積的種子層。
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延伸閱讀
- 張高德（2021）。Evaluation of the Thermal Effect on Materials used for Diffractive Element Depth Sensor。機械工業雜誌，(463)，15-21。https://www.airitilibrary.com/Article/Detail?DocID=P20171221002-202110-202110050013-202110050013-15-21
- 李雨霖（2007）。Microhydrodynamic Analyses of Transport Phenomena in Spacer-filledMembrane Module〔博士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200600889
- Stevanovic, S., Miljevic, B., Madl, P., Clifford, S., & Ristovski, Z. (2015). Characterisation of a Commercially Available Thermodenuder and Diffusion Drier for Ultrafine Particles Losses. Aerosol and Air Quality Research, 15(1), 357-363(i-i). https://www.airitilibrary.com/Article/Detail?DocID=16808584-201502-201503050004-201503050004-357-363(i-i)
- 陳立瑋（2018）。Design of Diffusion Barrier and Buffer Layers for Zn4Sb3 Mid-temperature Thermoelectric Modules〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201800359
- 鄭皓蓬（2017）。Microstructure and Diffusion Barrier of Bi2Te3 and Zn4Sb3 Thermoelectric Modules〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201700802