浮接場板結構橫向雙擴散金氧半場效電晶體之最佳化設計

The Optimal Design of Floating Field Plate LDMOSFET

吳長鑫(Chang-Hsin Wu)

指導教授 ： 龔正

國立清華大學/電機資訊學院/電子工程研究所/碩士(2008年)

https://doi.org/10.6843/NTHU.2008.00701

摘要

近年來，由於各種電子產品的推陳出新，使得功率元件的需求大幅增加。為了讓功率元件與平面製程做整合，因此必須將傳統垂直式元件結構改變成橫向式的設計。在這之中最常使用的元件便是橫向式雙擴散金氧半場效電晶體。功率元件的各種改良結構往往會提高生產成本，因此在不提高生產成本的情況下提升元件效能往往是一件困難的工作。
本論文在400V規格橫向式雙擴散金氧半場效電晶體中加入浮接場板，能夠在不增加任何生產成本的情況下使元件崩潰電壓有顯著地提升。在相同磊晶層濃度下，相較於傳統結構能夠令崩潰電壓提高74.5V。並且也利用模擬軟體來對浮接場板在橫向式雙擴散金氧半場效電晶體中的各種影響做出縝密的分析，最後得到元件的最佳化設計。

關鍵字

浮接場板 ； 功率元件 ； 雙擴散金氧半場效電晶體

並列摘要

In recent years, following the introducing of state of the art electronic products, demands for power devices have risen substantially. In order to integrate power devices with planar IC process, traditional vertical device needs to be changed to lateral structure. The most commonly used lateral power device is LDMOSFET. Most of the improvements of power device need to increase the cost. Getting better device performance without increasing the cost is often a difficult job.
In this thesis, we integrate floating field plate into 400V LDMOSFET and get larger breakdown voltage without raising the cost. At the same doping concentration of the epitaxy layer, it can get 74.5V higher than the conventional structure. We also use simulation tools to analyze the effect of floating field plate in LDMOSFET and get optimal design finally.

並列關鍵字

floating field plate ； RESURF ； LDMOS

參考文獻

[1] B. Jayant Baliga, Power Semiconductor Devices, Copyright 1996 by PWS.

[2] J. A. Appeals, H. M. J. Vaes, “High Voltage Thin Layer Devices (RESURF Devices)”, IEDM Tech. Dig., pp. 238-239, 1979.

[3] N. Fujishima, M. Saito, A. Kitamura, Y. Urano, G. Tada, Y. Tsuruta, “A 700V Lateral Power MOSFET with Narrow Gap Double Metal Field Plates Realizing Low On-resistance and Long-term Stability of Performance”, ISPSD’01, pp. 255-258.

High Density, Low On-resistance 700V Class Trench Offset Drain

“Double-resurf 700 V N-channel LDMOS with Best-in-class