高速與低崩潰電壓矽鍺雪崩式光偵測器

High Speed and Low Breakdown Voltage Germanium Silicon Avalanche Photodetectors

曾治國(Chih-Kuo Tseng)

指導教授 ： 李明昌 ； 那允中

國立清華大學/電機資訊學院/光電工程研究所/博士(2013年)

摘要

低崩潰電壓矽鍺雪崩光電探測器（APD)使用分離式放大和吸收結構,
分別是橫向矽雪崩二極體和垂直矽鍺光偵測器。由於製程條件與標準相容於CMOS工藝，極具潛力並應用於電子和矽光子積體化的高性能的接收器

關鍵字

矽鍺光偵測器

並列摘要

A low breakdown voltage Ge/Si avalanche photodetector (APD) was demonstrated
using a separated multiplication and absorption structure with lateral Si avalanche pin
and vertical Ge/Si pin. Because the process condition is compatible with standard
CMOS process, it is potential to be integrated with other electronics and Si photonics
and applied for high-performance optical receivers

並列關鍵字

SiGe photodetector

參考文獻

Chapter 1

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photodetectors," Opt. Express 15 (7), 3916-3921 (2007).

monolithically integrated with large cross-section silicon-on-insulator waveguide,"

Appl. Phys. Lett. 95 (26), 3 (2009).