預應變於微影製程中線寬調變上之應用

Photolithography Linewidth Modification by Pre-Strained Substrate

楊仲元(Chung-Yuan Yang)

指導教授 ： 羅丞曜

國立清華大學/工學院/奈米工程與微系統研究所/碩士(2013年)

摘要

目前半導體產業使用雙重圖形及浸潤式微影的技術來達到22 nm的製程，但由於其基本的光學及材料特性限制，這兩項製程方法也將很快地遇到瓶頸。同時，近年來各項軟性元件研究開始備受重視，在這樣的基礎上，本文提出了施加應變於軟性基板再進行微影製程來達到縮小其上結構線寬的方法。實驗的結果證明，圖樣可在不變更任何現有黃光製程設備及材料的情況下成功微縮，施加20%和40%預應變的狀況下，可分別獲得16.7%和28.6%的線寬微縮。

關鍵字

線寬微縮 ； 力學拉伸 ； 預拉伸 ； 後微影製程 ； 圖樣修改 ； 應變

並列摘要

Currently, the industry of semiconductor uses double-pattering and immersion lithography technique to achieve 22 nm manufacturing process. But according to its fundamental optical and material characteristics limitation, this two manufacturing process will face their bottleneck soon. In the same time, researchers put more focus on many kinds of soft devices. From this ground, this thesis presented a method that applying strain on flexible substrate then doing photolithography to reduce linewidth. The experiment results proved that pattern can be successively reduced without changing any lithography equipment and material which existing now. It could have 16.7% and 28.6% linewidth reducing respectively when applying 20% and 40% strain.

並列關鍵字

linewidth reducing ； mechanical stretching ； prestretch ； post-lithography ； pattern modification ； strain

參考文獻

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