摘要
本論文在於研究經由脈衝雷射蒸鍍系統，SrRuO3與Sr2RuO4薄膜的成長。為了要解決SRO薄膜中缺少釕的問題，我們加入氧化釕的靶材並進行雙靶材沉積法來成長SRO薄膜。在成長SrRuO3¬薄膜方面，不論是使用單靶材或雙靶材的方法，都能在X光晶體繞射量測裡觀察到清楚的厚度干涉波。θ搖擺曲線的半高波寬也能夠達到0.024度。此外，我們觀察到當晶格常數從3.979 Å減低至3.938 Å時，室溫電阻率也從492.9 μΩ⋅cm到262.9 μΩ⋅cm而減少 (雙靶材成長)。 而在Sr2RuO4薄膜方面，我們以單靶材方法，將Sr2RuO4薄膜成長在LSAT基板上，並且其室溫電阻率為166 μΩ∙cm、剩餘電阻率為11。在雙靶材方面，我們可以得到應變鬆弛的Sr2RuO4薄膜成長在SrTiO3基板上，其晶格常數與Sr2RuO4單晶塊材相近，並且在X光晶體繞射量測裡也觀察到清楚的厚度干涉波與窄的θ搖擺曲線 (半高波寬0.018度)。另一方面，在LSAT基板上成長更厚的Sr2RuO4薄膜，可以達到更好的剩餘電阻率35以及剩餘電阻3.24 μΩ∙cm。為了使Sr2RuO4薄膜達到超導，我們將試著找出最佳成長條件，以提高薄膜純度（達到更高的剩餘電阻率）。
並列摘要
In this thesis, the SrRuO3 and Sr2RuO4 thin films grown by pulse laser deposition (PLD) were studied. In the SrRuO3 work, double-target deposition method was developed to solve the Ru-deficiency problem. In x-ray diffraction (XRD) measurement, clear thickness fringes around the SrRuO3 (002)c diffraction peak were observed both in single-target and double-target growth. The narrowest FWHM of the θ-rocking curve of SrRuO3 was 0.024°. In addition, with the decrease of the c-axis lattice constant from 3.979 Å to 3.938 Å, the room temperature resistivity became lower from 492.9 μΩ⋅cm to 262.9 μΩ⋅cm (double-target growth). In Sr2RuO4 work, we have grown the Sr2RuO4 thin film with room temperature resistivity = 166 μΩ∙cm and the residual resistivity ratio = 11 on LSAT substrate by single-target method. In double-target deposition, we have grown the Sr2RuO4 thin film on SrTiO3 substrate with well-defined thickness fringes, narrow θ-rocking curve (0.018°) and the lattice constants that are close to the bulk Sr2RuO4 single crystal in XRD measurement. We have pushed the residual resistivity ratio to 35 and residual resistivity to 3.24 μΩ∙cm by growing the Sr2RuO4 film on LSAT in double-target growth. To make the Sr2RuO4 films superconducting, we have to pay more effort to improve the purity (to achieve higher residual resistivity ratio) of the films.
參考文獻
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