玻璃基板上沉積In-Ga-Zn-O透明導電膜之薄膜分析與光電特性

本論文在探討以共沉澱(co- precipitation)法為製作基礎，利用三種鹽類In(NO3)3、GaCl3、Zn(NO3)2分別與2種鹼類NaOH、NH4OH當前趨物，再經由不同的兩種過程:水熱法和鍛燒法去製作出IGZO溶液。有別於常見的濺鍍沉積方式，此處利用旋轉塗佈方式將溶液在室溫下沉積在玻璃基板中，再經由不同的熱處理溫度去觀察其薄膜特性。利用DLS、SEM、XPS去觀察粒子型態及組成，以及利用XRD觀察不同後處理溫度的薄膜其結晶情形。XRD顯示以水熱法製膜的樣品上從100度C到250度C以內有看到繞射峰值，並於250度到800度之間呈現非結晶相，直到超過800度C有一種新的結晶態IGZO4出現。並由UV-vis量測發現IGZO薄膜在可見光區有高達90%以上的穿透率，最後將材料在室溫下塗佈在TFT的通道區域上，觀察元件的開關特性。

關鍵字

氧化銦鎵鋅；溶液法；薄膜電晶體

並列摘要

In this thesis, IGZO solutions based on a co-precipitation method were further fabricated using two processes: hydrothermal route and calcination route. In(NO3)3、GaCl3、Zn(NO3)2 was used as a salt precursor and NaOH、NH4OH was used as an alkaline precursor. Differing from the common sputtering deposition techniques, the solution was deposited by a spin-coating method onto glass substrates, at room temperature, and subsequently the IGZO thin films were observed via differential heat treatment. DLS、SEM and XPS were used to examine grain morphology and components and XRD was used to analyze the crystalline phase of thin films via differential heat treatment. XRD patterns indicated that the sample prepared using the hydrothermal route revealed clear diffraction peaks within the range of 100-250℃ and amorphous phase within the range of 250-800℃. As well, a new crystalline phase IGZO4 was shown beyond 800℃. Based on UV-VIS spectra, the transmittance of IGZO thin film in the visible range was measured above 90 %. Finally, we coated material on the TFT channel area and observed on-off properties of the device.

並列關鍵字

IGZO ； solution-based ； TFT

參考文獻

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國際替代計量

玻璃基板上沉積In-Ga-Zn-O透明導電膜之薄膜分析與光電特性

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