The study of ITO films as AR coating for single crystal silicon solar cells

利用ITO薄膜當作單晶太陽能電池上的抗反射層之研究

蕭維浩(Hsiao, Wei Hao)

指導教授 ： 黃惠良

國立清華大學/電機資訊學院/積體電路設計產業研發碩士專班/碩士(2010年)

摘要

在本論文中利用射頻式真空濺鍍系統，以90 wt%的氧化銦 (In2O3)和10 wt% 二氧化錫 (SnO2) 當作靶材，於RF 功率 100 瓦 和 機台基板溫度 100℃，將沈積一層氧化銦錫 (Indium tin oxide-ITO) 薄膜於已被表面結構化(金子塔型)的p-型單晶矽基板上。不只用此薄膜來當作太陽電池的抗反射層(AR coating)，同時也來當作電子的傳輸層。然後與利用SiNx當作抗反射層的太陽電池來作比較。 利用 ITO 當作抗反射層的太陽電池，因為ITO可以直接當作電子的傳輸層，使串聯電阻和電子復合機率降低，故其短路電流(Short circuit current, Jsc) 和填充係數 (Fill Factor, FF) 很明顯的比利用SiNx當作抗反射層的太陽電池來得好。在最理想及沒做BSF的狀況下, ITO太陽電池的轉換效率可高達 16.56%。假設有做BSF的話，轉換效率可提高至17.42%。

關鍵字

單晶矽 ； 太陽電池 ； 氧化銦錫

並列摘要

The applications of Indium tin oxide (ITO) films on the texture single crystalline p‐type silicon were investigated. The ITO films were reactively sputtered from an oxide ceramic target 90 wt% In2O3 and 10 wt% SnO2 in O2, RF power 100 watt, the substrate temperature 100℃ and the base pressure is 3x10‐3 Torr. The ITO film serves not only as an antireflection coating but also an electrons transport layer for the solar cells. The comparison between the ITO ARC solar cell and the SiNx ARC solar cell was also made.
The solar cell with ITO ARC shows a significant higher short circuit current (Jsc) and Fill Factor (FF) compared to the one with SiNx ARC. Due to the electrons transport length is decreased, it results in lower series resistance (Rs) and electrons recombination probability as well as enhances the collection of the light generated carriers. At the optimal condition and without BSF, the conversion efficiency of the ITO ARC solar cell is achieved to 16.56%.

並列關鍵字

sc Si ； solar cells ； ITO

參考文獻

chapter 1

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