直流電弧離子鍍膜技術對於沈積低阻值高穿透率之ITO薄膜具有相當高的鍍膜速率,並且於高密度電漿中其粒子具有高活化能和離子化。本研究是利用直流電弧離子鍍膜技術於低溫環境下於玻璃基板上製作ITO薄膜,選用90/10 wt.% 之ITO靶材;本研究中控制之製程條件包括:靶源功率、磁濾管之流場強度、基材偏壓以及氧氣流量。並對於沉積於玻璃基板上之ITO薄膜作相關特性量測分析,研究內容包括;電阻率、光穿透率以及微結構組織之結晶性等。實驗分析結果顯示,於鍍膜環境100℃左右,應用此改良磁濾式陰極真空電弧離子鍍膜技術;透過製程參數的調整,可獲得極低的電阻率3.5×10-4Ω-cm以及光穿透率可達80﹪以上。而試片之電阻特性與光穿透率特性均可對應到薄膜之微結構組織之結晶性差異;並且與整體鍍膜製程條件之反應能量有極為密切之對應關係。
As is known that DC arc-discharge ion plating process is one of the more promising techniques for deposition of low-resistivity and high visible-transparency ITO films with high deposition speed. Besides, due to the particles and atoms are highly activated and ionized by this high-density plasma. We have previously deposited ITO and films on glass substrates by this method. In this study, the films structure, optoelectronic properties of the prepared ITO films were examined by XRD, SEM,