利用化學浴沉積法所製備氯化亞銅薄膜之特性分析

氯化亞銅(CuCl)是一種銅的氯化物，為寬能隙(3.399eV) I-VII族化合物半導體，且CuCl材料擁有突出的激子束縛能190 meV，使得CuCl相當有潛力開發為UV/Blue 發光元件。因此本論文則是以化學浴沉積法於銅基板以氯化銅及氯化鈉溶液製備氯化亞銅薄膜，且與單獨利用氯化銅溶液所製備出的氯化亞銅薄膜作比較。而研究結果得知以化學浴沉積法已可以製備出良好特性的氯化亞銅薄膜，且加入氯化鈉所製備出的氯化亞銅薄膜比未加入的沉積薄膜特性更佳，可改善Cl原子在CuCl薄膜中的比例。

關鍵字

化學浴；氯化亞銅

並列摘要

Copper (I) chloride (CuCl) is a kind of copper chloride, which is a broad band gap (3.399eV) I-VII compound semiconductor. CuCl has a prominent exciton binding energy of 190 meV, which makes CuCl considerable potential for the development of UV / Blue light-emitting devices. In this paper, CuCl films were deposited on copper substrate by chemical bath deposition using copper chloride and sodium chloride solution, and compared with the CuCl films deposited using only the copper chloride solution. The results show that the characteristics of CuCl films deposited by chemical bath deposition are very good. The characteristics of the CuCl film deposited by adding sodium choride solution are better than those of the film deposited without sodium chloride solution, and the proportion of Cl atoms in CuCl films can be improved.

並列關鍵字

chemical bath ； CuCl

參考文獻

[4]Yu-Ting Lin, “Fabrication of cuprous chloride films on copper substrate by chemical bath deposition”, Chung Yuan Christian University Department of Electronic Engineering Master Thesis (2015).

[1]https://en.wikipedia.org/wiki/Copper(I)_chloride