以金屬有機氣相沉積法成長p-型氮化鎵薄膜及其金屬歐姆特性分析

MOCVD growth of p-type GaN and related Ohmic contact analysis

蕭茹雄(Ru-Shang Hsiao)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2001年)

https://doi.org/10.6840/cycu200100152

摘要

中文摘要

本論文重點乃在於利用具多片同時成長之有機金屬氣相磊晶( MOCVD )裝置，成長氮化物半導體‧由過去的經驗可以知道，對於製造高性能的藍綠光發光二極體而研言，如何成長出高品質的p-型氮化鎵磊晶薄膜是一重要之課題‧當然；除了磊晶成長技術外，製程技術也對藍綠光發光二極體之性能具有顯著之影響，此關鍵製程技術包括p-型透明歐姆電極下面就有關P型摻雜層、P型摻雜層的活化及P型歐姆接觸、作一概略性的描述。

關鍵字

氮化鎵

並列摘要

In our study we use metalorganic chemical vapor deposition (MOCVD) to growth p-type GaN. Substrate temperature was set at 1170℃ with ammonia flow rate at 3.5 l/min and TMGa flow rate was equal to 20 sccm. We varied the flow rate of CP2Mg from 0.036 to 0.87 sccm. Thus, the CP2Mg/TMGa ratio (further, R) was varied within the region of 0.18%-0.435%. Post-growth annealing was applied to activate p-type conductivity.

並列關鍵字

p-GaN

參考文獻

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