垂直式物理蒸汽沉積法成長碳六十薄膜及其特性量測

Preparation and Characterization of C60 Films by Vertical Physical Vapor Deposition

鄭文榮(W. R. Cheng)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2001年)

https://doi.org/10.6840/cycu200100488

摘要

中文摘要

本文利用垂直式物理蒸汽沉積系統分別在玻璃、藍寶石及石墨基板上製備一系列碳六十薄膜。在固定粉末端溫度為528 ℃及改變基板溫度（Tsub=170～480 ℃），經由掃瞄式電子顯微鏡（SEM）之觀察，我們得到四種截然不同表面形貌的碳六十薄膜，分別為Tsub=170～260 ℃的type I、Tsub=260～310 ℃的type II、Tsub=310～435 ℃的type III及Tsub=435～480 ℃的type IV。同時由type I、type II及type III中得出碳六十分子在石英管壁上開始沈積的位置都是一致的，此位置正對應著最佳的基板溫度位置。此外藉由掃瞄式電子顯微鏡所觀察之厚度，來探討碳六十薄膜之成長速率並與基板溫度的關係，進而做Arrhenius plot，求得type I、type II 及type III所對應的活化壁障，在玻璃基板上分別為0.50±0.07 eV、0.68±0.17 eV及0.36±0.04 eV，在藍寶石基板上分別為0.54±0.11 eV、0.75±0.05 eV及0.36±0.03 eV，在石墨基板上分別為0.65±0.03 eV、0.60±0.19 eV及0.41±0.10 eV。同時利用x-ray繞射探討不同type薄膜之結構性。最後本文報告這四種不同表面形貌的薄膜在三明治樣品下的變溫電性量測。

關鍵字

特性量測 ； 碳六十薄膜

並列摘要

Abstract

A series of C60 films on glass ，sapphire and graphite substrate by vertical physical vapor deposition was prepared. With the source temperature at 528 ℃ and the substrate temperature Tsub varying from 170 to 480 ℃, we obtained four types of C60 films corresponding to different surface morphologies by scanning electron microscopy (SEM): type I (Tsub = 170~260 ℃), type II (Tsub = 260~310 ℃), type III (Tsub = 310~435 ℃), and type IV (Tsub = 435~480 ℃), We obtained the best substrate temperature response position by the observed of C60 deposited on quartz tube， respectively. In addition, by the observed thickness from SEM, a relation with the growth rate of the C60 films versus Tsub was obtained; and the values of activation energy estimated from Arrhenius plot with respect to type I, type II, and type III are 0.50±0.07 eV，0.68±0.17 eV，and 0.36±0.04 eV on the glass substrate，0.54±0.11 eV，0.75±0.05 eV，and 0.36±0.03 eV on the grapphire substrate，and 0.65±0.03 eV，0.60±0.19 eV，and 0.41±0.10 eV. Meanwhile, by x-ray diffraction the quality of the four C60 films is studied. Finally, the temperature-dependence electrical properties for these four types of film with sandwiched structure are performed.

並列關鍵字

characterization of C60 ； physical vapor deposition

參考文獻

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