碳六十薄膜成長及其場發射量測

Preparation and Field Emission of C60 Films

黃紹禮(Shao-Li Huang)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300674

摘要

本文以垂直式物理汽相沈積系統在重摻雜p-型矽基板(ρ=0.02~0.008 Ω-cm)上成長碳六十薄膜。在固定粉末端溫度為530℃及改變基板溫度(Tsub=170~480℃)成長一系列碳六十薄膜來進行場發射量測。並藉由掃描式電子顯微鏡(SEM)來觀察表面形貌與場發射的關係。在Tsub=364℃及373℃的溫度附近所成長的碳六十薄膜發現有場發射的現象，起始電場為3~5 V/μm，電流密度為10-9~10-8 A/cm2。

關鍵字

碳六十薄膜 ； 場發射

並列摘要

In this report, C60 films on p-type heavily-doped silicon substrates (ρ= 0.02~0.008 Ω-cm) are prepared by physical vapor deposition in a vertical chamber. The source temperature of the system is fixed at 530℃ and the substrate temperatures Tsub are varied from 170 to 480℃. The relationship between surface morphology of C60 films and characterization of field emission is taken by scanning electron microscopy (SEM). It is found that the C60 polycrystalline films deposited at Tsub≈ 364-373℃ exhibit field emission behavior with turn-on field of 3~5 V/μm and current density of 10-9~10-8 A/cm2.

並列關鍵字

C60 Films ； Field Emission

參考文獻

[1] A. Modinos, Field, Thermionic, and Secondary Electron Emission Spectroscopy, Plenum Press, New York, 1984.

[10] R.-F. Xiao, W.-C. Ho, L.-Y. Chow, K. K. Fung, and J. Zheng, J. Appl. Phys. 77 (1995) 3572.

[11] 鄭文榮, 垂直式物理蒸汽沈積法成長碳六十薄膜及其特性量測(碩士論文中原大學應用物理研究所, 2001)

[13] E. Schönherr, K. Matsumoto, and M. Wojnowski, J. Cryst. Growth 146 (1995) 227.

[15] T. B. Reed, and W. J. Lafleur, Appl. Phys. Lett. 5 (1964) 191.