分子束磊晶成長之碲化鋅/碲硒化鋅和 硒化鋅/硒硫化鎂鋅多重量子井 的光學特性量測

Optical Properties of ZnTe/ZnSe1-xTex and ZnSe/Zn1-xMgxSySe1-y Multiple Quantum Well Grown by Molecular Beam Epitaxy

蔡宜霖(Yi-Lin Cai)

指導教授 ： 周武清

中原大學/理學院/應用物理研究所/碩士(2002年)

https://doi.org/10.6840/cycu200200101

摘要

摘要
利用分子束磊晶技術成長了兩套量子井結構，分別為碲化鋅/碲x硒1-x化鋅(碲濃度為0.46和0.78)和硒化鋅/硒1-y硫y化鎂x鋅1-x(鎂濃度為0.03，硫濃度為0.09)多重量子井結構，並藉由光激螢光譜量測其光學特性。
第一套樣品為第二型的碲化鋅/碲x硒1-x化鋅多重量子井結構，其電子侷限在碲x硒1-x化鋅層中,而電洞侷限碲化鋅層中。在光激螢光譜下，由於碲化鋅/碲x硒1-x化鋅多重量子井屬於第二型，當溫度在70到90K以上時，可發現光激螢光的強度會迅速的衰減。利用變溫光激螢光譜的積分亞倫尼斯 (Arrhenius)圖法得到激子活化能之值隨著碲x硒1-x化鋅層的厚度改變。利用縱向光學聲子、雜質及聲學聲子等互動參數作為隨著溫度改變之光激螢光譜線寬之理論模擬分析，可得到雜質束縛能量隨著碲x硒1-x化鋅層的厚度增加而減少。
另一套樣品為第一型的硒化鋅/硒1-y硫y化鎂x鋅1-x(鎂濃度為0.03，硫濃度為0.09)多重量子井結構，電子和電洞都侷限在硒化鋅層中。激子活化能值隨著硒化鋅層而增加。利用縱向光學聲子、雜質及聲學聲子等互動參數作為隨著溫度改變之光激螢光譜線寬之理論模擬分析，得到雜質束縛能量隨著硒化鋅層厚度而增加。

關鍵字

分子束磊晶

並列摘要

Abstract
We present photoluminescence (PL) spectra from two sets of samples, ZnTe/ZnSe1-xTex (x = 0.46 and 0.78) and ZnSe/Zn1-xMgxSySe1-y (x = 0.03, y = 0.09) multiple quantum wells (MQW), grown on GaAs (001) substrates by molecular beam epitaxy (MBE). A type II band alignment was found in the ZnTe/ZnSe1-xTex quantum well system. Electron is confined in the ZnSe1-xTex layer while hole is localized in the ZnTe layer. At temperature was above 70~90K, inter-band optical emission intensity dropped rapidly. Activation energies calculated from the arrhenius plot of the integrated PL vary with the ZnSe1-xTex layer thickness. The temperature dependent PL line-width broadening was fitted byΓ(T)=Γ0+Γa T+ΓLO/[exp(ħωLO / kT)-1] + Γi exp(- / kT). The impurity binding energy and the impurity related constant Γi were found to decrease with ZnSe1-xTex layer thickness.
The type I band alignment of the ZnSe/Zn1-xMgxSySe1-y (x = 0.03, y = 0.09) MQW was determined by the study of PL spectra. Both electron and hole are confined in the ZnSe layer. Activation energy was found to increase with the ZnSe well width. The fit of the temperature dependent PL line-width broadening shows a quantum confinement reduced exciton-longitudinal optical (LO) phonon interaction. Both andΓi increase as the ZnSe well thickness is increased.

並列關鍵字

MBE

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