Contactless Electroreflectance Modulation Spectroscopy of Zn0.86 Cd0.14 Se/ZnSe Multiple Quantum Wells

硒化鎘鋅／硒化鋅多層量子阱之無接點式電場反射係數調制譜線研究

洪啟仲(C. C. Hong) ； 楊祝壽(C. S. Yang) ； 朱惠美(Amy H.-M. Chu)

《中原學報》 29卷1期 (2001/03) Pp. 9-14

https://doi.org/10.6358/JCYU.200103.0009

摘要

利用無接點式電場反射係數(CER)調制譜線技術探討以分子束磊晶法(MBE)成長於砷化鎵基板上之硒化鎘鋅／硒化鋅系列多層量子阱材料在溫度20K到210K範圍內之光電特性，該系列的激子躍遷能量由硒化鎘鋅／硒化鋅多層量子阱阱寬分別為14Ǻ，25 Ǻ，50Ǻ,及75Ǻ之材料的CER譜線設定(fitting)而獲得。該系列之激子躍遷能量的偏移值與基於一維量子阱模型之理論計算結果非常吻合，最後結果顯示該系列之激子躍遷能量值隨溫度與阱寬的增加而減少。譜線設定的細節提供有關硒化鎘鋅／硒化鋅多層量子阱調制譜線的重要訊息。

關鍵字

無接點式電場反射係數 ； 調制譜線 ； 分子束磊晶法 ； 多層量子阱 ； 激子躍遷能量 ； 譜線設定

並列摘要

Contactless electroreflectance (CER) modulation spectroscopy have been used to study a Zn0.86Cd0.14Se/ZnSe multiple quantum wells (MQWs) system grown by molecular beam epitaxy (MBE) method on GaAs substrate in the temperature region from 20 K to 210 K. The exciton transition energies of this system are obtained by line shape fitting of CER spectra of Zn0.86Cd0.14Se/ZnSe multiple quantum wells at well width 14Ǻ25 Ǻ50Ǻ, and 75Ǻ. The energy shifts of exciton transition energies of the system are in good agreement with a theoretical calculation based on one-dimensional quantum well model. It is shown that the exciton transition energies of the system are decreased when the temperature and the width of quantum well increase. Details of the lineshape fit yield important information about the modulation spectroscopy of Zn0.86Cd0.14Se/ZnSe multiple quantum wells.

並列關鍵字

Contactless Electroreflectance ； Modulation Spectroscopy ； Molecular Beam Epitaxy ； Multiple Quantum Wells ； Exciton Transition Energy ； The Lineshape Fitting