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  • 學位論文

高頻被動元件之研究與製作

The Study of High Frequency Integrated Passive Devices and Applications

指導教授 : 鄭湘原
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摘要


本論文最主要的目的在於製作及探討被動元件,包含電感、電容、電阻等元件,最後利用這些被動元件應用在VCO震盪器中。其整個製作設計、製作方式、模擬、量測等,在本論中有詳述。 高頻被動元件在現今已的通訊系統是不可缺少的元件之一,因此這也是本論文研究的目的。電感器在高頻區段中有幾個特殊的效應,如集膚效應(skin effect)、寄生效應、共振頻率等。電容器雖然在這方面效應的影響較不明顯,但是其在高頻區段仍然有些許的損耗,因此在模擬時也將考慮寄生效應,增加模擬準確度。 量測方面,以PCB板的量測方式,在網路分析儀HP8720C做特性阻抗量測(S11)並分析,主要分析的特性有品質因數、實際電感值、實際電容值等。最後將這些被動元件應用在VCO震盪器的電路上,並討論此震盪電路IC化之後對被動元件的影響及其表現。

關鍵字

高頻 被動元件

並列摘要


The major objective of this thesis is to fabricate and study passive devices using standard monolithic silicon processing technology. The study includes inductors, capacitors and VCO. Finally, these devices are applied in a VCO oscillator circuit. The design simulation and measurement of related devices are also presented in this thesis. High frequency passing devices are indispensable in today’s communication circuit. It is also our goal to study their potential applications in the thesis. Inductors have several characteristics in high frequency range such as skin effect, parasitic effect and resonant frequency. Although capacitors have no severe degradation in items of these effects, they still show certain degree of dielectric loss in high frequency range. During simulation, we also consider these parasitic effects to improve accuracy of simulation. All characteristic impedance measurements were performed in HP8720C network analyzer. These analyses are mainly focused on quality factor, inductance and capacitance. Finally, these devices are used to fabricate VCO oscillators. And the integration of active and passive devices into a single IC chip will be discussed.

並列關鍵字

high frequency passive devices

參考文獻


6. H.M. GREENHOUSE, “Design of Planar Rectangular Microelectronic Inductors,” IEEE Transactions on Parts, Hybrids, and Packaging, Vol PHP-10 No. 2, June 1974, pp101-109.
10. H. A. Wheeler, “Formulas for the skin effect,” in Proc. I. R. E., Vol. 30, Sept. 1942, pp. 412-424.
12. . Yue, C.P.; Wong, S.S., “Physical Modeling of Spiral Inductors on Silicon”, Electron Devices, IEEE Transactions on , Volume: 47 Issue: 3 , March 2000 Page(s): 560 –568.
13. Park, J.Y.; Allen, M.G., “High-Q Spiral-Type Microinductors on Silicon Substrates”, Magnetics, IEEE Transactions on , Volume: 35 Issue: 5 Part: 2 , Sept. 1999 Page(s): 3544 –3546.
14. Jan Craninckx, and Michiel S. J. Steyaert, “A 1.8GHz Low-Phase-Noise CMOS VCO Using Optimized Hollow Spiral Inductors,” IEEE Journal of Silid-State Circuits, Vol. 32, No. 5, May 1997, pp. 736-744.

被引用紀錄


賴政衍(2012)。積層陶瓷電容之燒結製程參數最適化研究〔碩士論文,國立屏東科技大學〕。華藝線上圖書館。https://doi.org/10.6346/NPUST.2012.00164
王士豪(2005)。埋入式被動元件整合於軟性電路板之研究〔碩士論文,大同大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0081-0607200917233635

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