應用於數位相機的影像感測器之週邊電路設計及測試

The Design and Test of Peripheral Circuits of Image Sensor for a Digital Camera

孟慶明(Andrew Meng)

指導教授 ： 何金滿

中原大學/工學院/電機工程研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300201

摘要

摘 要
數位相機的誕生,不僅創造了許多新的攝影經驗和技術 ,而且隨著 電子元件的應用知識的提昇,直接或間接的也創造出許多新的技術。 與傳統數位相機相比,數位相機的優點為可利用電腦儲存 ,修改或 刪除影像及透過網路傳輸,這是傳統相機所不能及的。 本論文首先研究CMOS及CCD感測器, 這兩種形式的數位相機之基本比較及產生影像方式的差異性,並以應用於數位相機的CMOS 感測器之週邊電路設計為重點, 逐步分析CMOS感測器之週邊電路及電源管理之設計方法。 最後則依據國際認證之 EMC(即指ESD , EFT/B及EMI)標準, 逐步測試所設計的數位相機,並有解決EMI之實例分析。

關鍵字

感測器

並列摘要

ABSTRACT

The invention of the digital camera creates not only a new technology for the photography but also new applications and developments with the combination of electrical devices.
Compared to traditional cameras,the digital camera has the following advantages: *Image could be stored easily.
*Image could be repaired.
*Image could be deleted.
*Image could be transmitted through network.
This thesis compares the basic and how to acquire image differences between the CMOS sensor and CCD sensor first, and
then study the design of peripheral circuits of CMOS sensor for a digital Camera and power management.
Finally, the test method of digital camera must meet the EMC
(ESD, EFT/B and EMI) international verification standard.

並列關鍵字

CMOS sensor

參考文獻

[1] E.Fossum,”CMOS Image sensors:Electronic camera on a chip,” IEEE Trans.Electron Devices,vol.44,pp.1689-1698,Oct.1997

[2] W.Zhang,M.Chan,and P.K.Ko,”Performance of floating gate/body tied SOI NMOSFET photo-detector on SOI substrate,”IEEE Trans Electron Devices,vol.47,pp.1375-1384,July 2000

[3] H.Yamamoto,K.Taniguchi,and C.Hamaguchi,”High sensitivity SOI MOS photodetector with self-amplification,”Jpn.J.Appl.Phys., vol.35,pp.1382-1386,1996

[4] W.Zhang,M.chan,H.Wang,and P.K.Ko,”Building hybrid active pixels for CMOS imager on SOI substrate,”Proc.1999 IEEE Int. SOI Conf.,pp.102-103,Oct.4-7,1999.

[5] X.Zheng,G.Yang,C.Wrigley,and B.Pain,”High responsivity CMOS imager pixel implemented in SOI technology,”Proc.2000 IEEE Int.SOI Conf.,pp.138-139,Oct.2-5, 2000 。