本文分為以下兩個部分。第一部分,首先利用物理汽相沉積法( Physical Vapor Deposition, PVD ),由改變基板溫度Tsub給予Alq3分子不同的表面擴散動能,以製備不同成長條件下之Alq3的非晶係薄膜。同時利用原子力顯微鏡研究薄膜表面形貌。然後,分別利用光激螢光頻譜與電容分析量測瞭解薄膜的光電性質。最後,討論出Alq3非晶薄膜最佳的成長條件。在第二部分中,藉由第一部分所得之結果,在不同基板溫度條件下製備有機發光二極體。並藉由光激螢光與電致螢光量測分析這些有機發光二極體的頻譜與發光強度之物理性質。同時也探討最佳的有機發光二極體製備條件。
There are two parts in this work. In the first part, different Alq3 amorphous layers are prepared by physical vapor deposition with different substrate temperatures, Tsub. The surface morphology of these layers is studied by atomic force microscopy. Then, the electrical and optical properties of these layers are investigated by capacitance analysis and photoluminescence, respectively. Finally, the optimum deposition conditions for Alq3 amorphous layers are discussed. In the second part, from the results obtained by the 1st part, the prototypes of organic light-emitting diodes (OLEDs) are prepared with different Tsub. The spectrum and the intensity of the luminance from these OLEDs are analyzed by photoluminescence and electroluminescence, respectively. The optimum deposition conditions for OLEDs are also proposed.