C59N的合成及其摻雜C60薄膜之研究

Studies on the synthesis of C59N and the preparation of C59N doped C60 polycrystalline films.

陳毅慶(I-Ching Chen)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300549

摘要

本文利用電弧放電法，在放電的過程中通入一定比例的氦氣與氮氣，來合成含有C59N的C60粉末。此類粉末經由過濾萃取與管柱液相層析純化後，再利用FT-IR (Fourier transform infrared spectrum) 與XPS (X-Ray Photoelectron Spectroscopy ) 來分析鑑定C59N的成分。此外本實驗使用PVD (physical vapor deposition)成長系統，成長含C59N的C60多晶薄膜，並利用掃瞄式電子顯微鏡SEM(Scanning Electron Microscopy)進行表面形貌分析。最後以電性量測的方式，來探討C59N的摻雜對C60多晶薄膜電性的影響。

關鍵字

碳五十九氮 ； 碳六十

並列摘要

In a dc-arc furnace with a flow of mixture of nitrogen and helium gases, heterofullerenes C59N can be synthesized. The purification of powder is done by extraction and column liquid chromatography, and then analysis the existence of heterofullerenes C59N is conformed by using FT-IR and XPS. In addition, the C60 polycrystalline films doped with the heterofullerenes C59N are obtained from physical vapor deposition. The surface morphology and electrical properties of these films are studied by SEM, I-V, and I-T , respectively.

並列關鍵字

C60 ； C59N

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