摘 要 本文主要研究氮化銦鎵/氮化鎵發光二極體的光激螢光特性。我們發現快速熱退火處理會使光激螢光光譜的半高寬變窄,使得樣品的品質變好。此外光激螢光光譜尖峰位置隨快速熱退火溫度有先紅位移再藍位移的現象,這是因為發光二極體中的氮化銦鎵/氮化鎵量子井中的位能已經受到改變。由改變激發光功率與時間鑑別的光激螢光光譜實驗中,我們證實了發光二極體中的侷域效應會因快速熱退火處理而變小。
Abstract In this thesis, we present the photoluminescence(PL)properties of InGaN/GaN multiple-quantum-well LEDs. It is found the linewidth of PL can be reduced by rapid thermal annealing(RTA), leading to improve the quality of the sample. Also as the RTA temperature is increased, a red shift of the PL peak is observed, followed by a blue shift. This result is probably due to the change of potential-energy of the quantum wells in LEDs. In the power-dependent and time-resolved PL measurement, we demonstrate that the localization effect in InGaN/GaN LEDs is reduced due to the RTA treatment.