摻雜稀土元素於磷砷化銦鎵之特性研究

Characterization of rare-earth-treated InGaAsP Layers

徐煥棠(HUAN TANG SHIU)

指導教授 ： 沈志霖

中原大學/理學院/應用物理研究所/碩士(2001年)

https://doi.org/10.6840/cycu200100258

摘要

摘要

本論文以液相磊晶法成長In0.83Ga0.17As0.4P0.6磊晶層於InP基板上，並且摻入稀土族元素以研究對磊晶層的影響。
我們分別使用光激螢光(Photoluminescence：PL)、光電導(Photoconductivity：PC)、持續性光電導（Persistent Photoconductivity：PPC）與拉曼散射(Raman scattering)等光譜量測系統對樣品做量測。從光激螢光光譜圖中觀察到摻雜稀土族元素鈥時，其光激螢光的半高寬(full width at half maximum:FWHM)有明顯變窄的情形。而光電導光譜實驗結果與光激螢光量測結果相同，都證實了摻雜稀土族元素於磊晶層中可明顯改善磊晶層品質。而拉曼散射實驗得知合金無序(alloy disorder)排列，沒有因為稀土元素鈥的摻雜而改變。此外，我們利用持續性光電導實驗計算出未摻雜樣品缺陷(defect)的電子捕捉能量(electron capture energy)，與摻雜稀土族元素鈥之後缺陷(defect)的電子捕捉能量。

關鍵字

稀土元素 ； 光電導 ； 磷砷化銦鎵 ； 液相磊晶

並列摘要

ABSTRACT

The rare-earth (RE) doped InGaAsP epitaxial layers, lattice-matched to InP, were prepared by the liquid phase epitaxy system. In this work, we investigate the influence of the rare-earth elements doped into InGaAsP layers by the photoluminescence(PL), the photoconductivity(PC), the persistent photoconductivity(PPC) and the Raman scattering measurements.
The full width at half maximum (FWHM) of photoluminescence spectrum of Ho-doped InGaAsP layers exhibit, narrower than that of the undoped layer. Photoconductivity spectrum of InGaAsP layers doped with Ho has a larger slope than that of the undoped layer. From the result, of the PL and the PC, the rare earth elements are acting as an efficient gettering agent to reduce the free-carrier concentration and the shallow impurities. On the other hand, the Raman scattering measurement shows that the alloy disorder has not changed by the doping of the rare-earth (RE) elements.
In addition, by PPC measurements, we can obtain the electron capture energy of the defect-centers of the undoped epitaxial layers, and that of the Ho-doped epitaxial layers.

並列關鍵字

LPE ； PC ； InGaAsP ； Rare-earth

參考文獻

9.朱文章, 沈穎華, 半導體光電性質 (1995)

3. A. T. Gorelenok, A. V. Kamanin, and N. M. Shmidt, Micro. J. 26, 705（1995）

4. R. Saito and T. Kimura, Phys. Rev B 46, 1423（1992）

7. W. Gao and P. R. Berger, J. Appl. Phys. 80, 7094（1996）

8. S. Dhar, S. Paul, and V. N. Kulkarni, Appl. Phys. Lett. 76, 1588（2000）