利用電荷幫浦研究氮化矽中電荷分佈

Charge Profiling Distribution in Silicon Nitride by Charge Pumping Method

黃宏茂(Hong-Mao Huang)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2005年)

https://doi.org/10.6840/cycu200500739

摘要

中文摘要
近年來，隨著可攜式產品，如筆記型電腦、數位相機、手機等的普及，非揮發性記憶體在半導體記憶元件的發展與研究上，其所扮演的角色是愈來愈重要。隨著半導體製程技術逐年的進步，非揮發性記憶體，從最早的唯讀記憶體(Read-Only-Memory，ROM)、可程式唯讀記憶體(Programmable-Read-Only-Memory，PROM)，到可抹除程式化唯讀記憶體(Erasable- Programmable-Read-Only-Memory)、電性可抹除程化唯讀記憶體(Electrically Erasable Programmable Read Only Memory，EEPROM)，以至目前最熱門的快閃記憶體(Flash Memory)，都可看見半導體製程技術在非揮發性記憶體上的運用亦逐年在進步。
本篇論文以一單電晶體非揮發性記憶元件為研究主題，實驗並分析其元件特性。此元件利用通道熱電子作為起寫入機制，成功驗證其可讀寫的特性，此外，利用電荷幫浦技術分析元件在不同溫度下的儲存電子分布情形。

關鍵字

電荷分佈 ； 電荷幫浦 ； 快閃記憶體

並列摘要

英文摘要
Non-Volatile Memories (NVMs) have been developed and progressing in past decades, and recently it has been received much attention in mobile and portable applications, such as mobile phones, smart cards and digital cameras. In the First part of this thesis, the history of the Non-Volatile Memory (NVM) and the concept of the NVM are introduced. And the typical NVMs, such as EPROM, EEPROM, and flash memory are also introduced.
The main purpose of this thesis presents the characteristics of a single-polysilicon non-volatile memory (NVM) device by using a NOI n-MOSFETs device. Hot carriers are generated in NOI devices and to be stored as memories . The characteristics of this potential single-transistor NVM cell, including 2-bit operation and retention characteristics, are investigated. After the retention characteristics, the charge pumping method is used to analyze the charge distribution of NOI device。

並列關鍵字

Charge Pumping ； Flash ； Charge Distribution

參考文獻

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