大氣電漿技術應用於表面基材處理之應用特性分析

The specific analysis for glass cleaning by AP-P

江俊毅(Chun-Yi Chiang)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2009年)

https://doi.org/10.6840/cycu200900674

摘要

本論文的主題有二，首先研究在製程中部分有機物無法在清潔程序中有效被移除狀況；現行使用UV光來分解有機物質，以及增強玻璃基板表面的親水性(Hydrophile)，因此現階段會常利用紫外光(UV)或真空紫外光(VUV)的方式將殘餘的有機污染物移除。

但使用UV光燈管有燈管壽命的問題(約每一千小時就要更換)，於操作期間，燈管之性能也會隨時間增長而降低，因此於維持製程穩定與均一品質之議題上將成為複雜之問題。而本研究利用常壓電漿設備取代UV燈管裝置，以清除玻璃基板表面有機污染物乃目前認為可行性相當高的方法之一。

另一研究課題為透過探討大氣電漿進行放射光譜分析(OES)，測量主要電漿物種濃度，藉由FIB/EDS觀察試片表面有機污染物成分，XPS/AFM量測表面粗糙度，碳氧化學型態，FIB跟EDS的量測會方便我們建立常壓電漿相關製程的條件參數。即電漿改質膜材時，除了氧原子濃度與親水化程度有最直接之關係外，再給予適當之氣體效應輔助，造成最佳改質效能。唯有大氣電漿束能均勻的放電，對材料表面改質才有幫助。

最後我們利用了大氣電漿內，定量的CDA及N2混合處理後來討論有機物污染去除的電漿特性，我們實驗發現經由電漿改質後的基板表面，其極性項大幅提升(4.21°~>51.65°)，非極性項降低(35.89°~>17.35°)，接觸角都從35°左右降至10°以下，親水性的改變，在一次處理後便接近飽和了。

關鍵字

壓縮空氣 ； 氮氣 ； 大氣電漿

並列摘要

There are two main topics in this article, first is the un-removable organic particles from the cleaning then efficiently removed by the plasma process. Currently, the UV light is using to decompose the organic particles, and improves the substrate hydrophilic surface. Therefore, it is very comment to use UV and VUV to remove the remaining organic contaminations.

The short life time and gradually decade process efficiency of the UV lamp are the major issues (Replacing in every 1000 hours).Above issues result the unstable process and product qualities, and very complicated to manage. This study is using the Atmosphere Pressure Plasma (AP Plasma) to replace the UV system to achieve the same cleaning efficiency on the substrate surface organic contaminations, and many results approve its capabilities

Another study is to discuss the OES of the AP Plasma. The measurements includes the concentration of each element from the plasma through the FIB/EDS checking sheet to identify the contents of the surface organic contaminations, XPS/AFM for the surface roughness measurements and the C-H chemical boning status. The FIB and EDS measurements can help to easily create a good reference for process parameter settings. When the plasma changing the property of the film, not only direct effects the oxygen atom concentration and the degrees of hydrophilic, also applies a suitable gas to support, and it can optimize the efficiency of the property changes. Only the AP Plasma can perform a evenly discharge, and it helps the surface property changes

Finally,discuss the AP Plasma process characteristic on removing the organic contamination by using a fixed amount CDA and N2 mixture. A discover of the substrate property changed the plasma through the tests,the
polar has been increase dramatically (4.21o~>51.65o) non-polar has been reduced (35.89o ~>17.35o), and the contact angle from 35 o dropped to below 10 o Only one time AP Plasma treatment is able to achieve the hydrophilic result.

並列關鍵字

Atmosphere Pressure Plasma ； CDA ； N2

參考文獻

[12] 劉志宏，“應用實驗設計法與電漿診斷技術探討電漿沉積氟碳膜製程之研究”，私立中原大學博士論文 (2005).

[6] 郭有斌，”微中空陰極陣列常壓電漿與低溫成長碳奈米結構 ，成功大學化學工程研究所博士論文。92/09

[8] GS Selwyn，HW Herrmann，J Park，I Henins，” Materials Processing Using an Atmospheric Pressure，RF-Generated Plasma Source ”，Contrib. Plasma Phys. vol (2001) 6,pp 191−192

[13. ] Young, T. (1805)，“An essay on the cohesion of fluids，” Philos.

Trans. R. Soc. London， Vol. 95， pp. 65-87.