減壓乾燥設備之製程最佳化探討

摘要近年來由於TFT-LCD工業快速成長，現行產品朝向高畫質，高效能及高對比發展，要如何使產品的品質提升，將會是追求的主流。本篇論文將研究如何利用DOE田口實驗及搭配RBFN方式，找出光阻塗佈機VCD設備上減壓乾燥的壓力系統的最佳化條件，防止光阻於真空Pump系統中，光阻因減壓乾燥而產生光阻材料成膜時的突沸，而造成光阻表面產生小麻點的問題，並將此製程種類做分類。依據先前RBF模擬分析演算論文，再此進階利用田口直交表之染色體初始群組，決定每一個樹脂BM小麻點點數參數搜範圍，再利用RBFN製程建模，找出製程參數之最佳水準後，實際使用於線上，其最佳配方生產方式比較改善前之抽樣水準，利用Chip/點數Repair比例，6片最佳配方持續生產平均Repair 小於5點，Total點數10~20點因此此最佳配方條件成立。

關鍵字

減壓乾燥； MATLAB ； DOE 田口實驗

並列摘要

Abstract In the recent years, as the TFT-LCD industry grows rapidly, the current product is aimed at development of high quality, high efficiency and high contrast display. Hence, ways leading to product enhancement become the main goal to pursue. This paper shall investigate ways to use design of experiment (DOE) and RBFN (radial basis function network) method to find the optimized conditions for the pressure system serving to reduce pressure and dry on VCD equipment of the photo-resist spin coater, thus preventing photo-resist in the vacuum pump system from generating tiny particles on the photo-resist surface due to boil-over caused by dryness after pressure reduction during deposition of the photo-resist layer. Furthermore, the processes are classified. Based on the past RBF simulation analysis and algorithm, chromosome initialization population of the Taguchi’s orthogonal arrays is further used to determine the search range of the parameter of every tiny resin BM particles. Subsequently, RBFN process is used to construct a model. After obtaining the optimized process parameter, it is practically used on the production line. Samples of the optimized production are taken and compared to the process before enhancement, and based on the ratio of Chip/Particle Repair, it has been experimented and determined that 6-piece is the optimized formulation with the average repair less than 5 particles and total repair being between 10 to 20 particles. Hence, the best formulation has been found.