注入電流密度於非重疊式離子植入金氧半場效電晶體之研究

The Study of The Injection Current Density Distribution on Non-overlapped Implantation MOSFETs

周尚緯(Shang-Wei Chou)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2009年)

https://doi.org/10.6840/cycu200901587

摘要

半導體製程技術的精進使得半導體非揮發性記憶體亦大幅進步。隨著元件的微縮，具功率消耗低、元件密度高、操作速度快、且相容於CMOS製程等特色的記憶元件將是未來發展的趨勢。
本論文以研究在新型非重疊式離子植入金氧半場效電晶體中之注入電流分佈與密度做為主題，此記憶元件的寫入係利用通道熱電子注入，並以兩側壁區作為個別位元儲存之區域。藉由模擬軟體TSUPREM4與MEDICI模擬不同寫入偏壓條件下的橫向與縱向電場並從Lucky Electron Model理論推導電子注入機率在元件中的橫向分佈。最後，利用實際量測--電荷幫浦(Charge Pumping)的方式驗證出在元件中的注入電流密度，並比較理論推算與實際量測的電流注入分佈。

關鍵字

熱電子注入 ； 非揮發性記憶體 ； Lucky Electron Model

並列摘要

The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing become improtant development trend in non-volatile memories.
This work explores the distribution of injection current in the Non-overlapped Implantation (NOI) MOSFETs. As non-volatile memories, the NOI devices can be programmed by channel hot electron injection and store charges in their nitride spacers. The TSUPREM4 and MEDICI are used to simulate the processes and electric characteristics under different programming conditions. According to Lucky Electron Model, the local of electron injection probability along lateral position can be deduced. The charge pumping (CP) experiments have shown lateral distribution of the injection current density. Finally, CP experiments are measured to verify simulation results.

並列關鍵字

Lucky Electron Model ； hot carriers injection ； NVM

參考文獻

Chapter 1

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