單邊非重疊離子植入式n型金氧半場效電晶體之擊穿機制研究

Study of Punch Through Mechanism in Single-sided Non-Overlapped Implantation nMOSFETs

袁爾亨(Er-Heng Yuan)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2013年)

https://doi.org/10.6840/CYCU.2013.00397

摘要

隨著可攜式產品的蓬勃發展，各種記憶體亦越來越受到人們的重視。本論文將提供一新型反熔絲之單邊非重疊式離子植入金氧半場效電晶體(Single-sided Non-Overlapped-Implantation SNOI) 記憶元件結構，並針對其製程及寫入/讀取機制進行說明。
　　此新型反熔絲元件於寫入前後擁有一超過109A之電流差異，其寫入機制則由金氧半場效電晶體之二次崩潰效應來完成，此反熔絲元件進行寫入時，由於撞擊離子化所產生之電洞將流往元件之基底，且造成基底之電位提升，該提升之電位則導致基底效應並增加撞擊離子化效應；在此正回授循環下導致元件通道所流過大量電流時，將發生元件之通道崩潰而使通道等效電阻大幅變小而達到資料寫入之目的。單邊非重疊式離子植入金氧半場效電晶體之反熔絲元件，其二次崩潰汲極電壓是由理論推導而得，為7.14V，可與實驗結果7.2V獲得良好的驗證。論文中將建立金氧半場效電晶體之二次崩潰電壓模型並搭配實驗與模擬進行模型之準確性的驗證。

關鍵字

擊穿效應及二次崩潰效應 ； 一次性寫入 ； 反熔絲

並列摘要

Non-volatile memories play more and more important roles with the development of the portable microelectronic products. In this work, a novel one-time-programmable single-sided non-overlapped implantation (SNOI) anti-fuse cell is investigated.
　　The anti-fuse cell has a large window in read-out currents wherein Iread for initial state is less than 10-12A and Iread for programmed state is over 10-3A. Its programming mechanism is attributed to MOSFET secondary breakdown. A positive substrate bias has been generated by impact ionization hole current flowing through the device body, which pulls down the channel barrier and therefore enhances the MOSFET channel breakdown. The second breakdown drain voltage VD, SB is derived by theoretical deduction. The VD, SB in SNOI anti-fuse is 7.14V, which has a good agreement with the experimental result, i.e. 7.2V. The secondary breakdown in MOSFET has been modeled to verify the experimental results.

並列關鍵字

punch-through and second breakdown ； Anti-fuse ； one-time programmable (OTP)

參考文獻

Chapter 1

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