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  • 學位論文

探針接觸特性對於晶圓良率測試之研究

The effect of Probing contact on Chip Test

指導教授 : 籃山明
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摘要


IC測試主要可以分為晶圓測試(Wafer Probing)及成品測試(Final Testing)兩部份,其中晶圓測試是在IC尚未封裝前以探針做簡單的功能測試,以避開不良品,減少不必要的封裝成本投入;成品測試則係在IC封裝後,用於確認IC之功能、速度、容忍度、電力消耗屬性是否正常,也因此,此階段測試的項目及複雜度遠較前者為大,所用的測試機台也較為高階,可說是產品出貨給使用者前最重要的把關動作,對各家IC廠而言,也代表著商譽是否能夠持續累積,不至於有不良品落到客戶手中。 本文重點在於,分析各種影響晶片測試良率的原因,針對這些原因去深入探討,並提出對策改善,整個針測過程中的電性傳導,是經由探針卡的探針傳導到晶片內,接觸不良往往是造成整個測試不穩定的主因,然而過重的針壓也會造成晶片的底層或鋁墊受損。 晶圓測試是以探針卡透過上千支細如毛髪的探針,來測量晶圓上的電路性能以檢測晶圓電路是否有瑕疵。隨著積體電路製程技術進步,積體電路元件密集度增加,電子元件尺寸越作越小,探針則愈作愈細,探針應力及可靠度和壽命問題嚴重影響晶圓測試成本。由於磨耗及污染,探針之接觸電阻會隨針測次數而逐漸增加,最後造成探針性能劣化。因此探針之接觸電阻是影響探針壽命的主要因素。

關鍵字

晶圓針測 探針卡 銲墊 測試機 針測機

並列摘要


IC test can be divided into wafer testing(Wafer Probing) and the final test (Final Testing) in two parts, which is in the wafer testing prior to the probe IC do not package a simple functional test to avoid the bad products, reduce unnecessary packaging cost input; product testing is IC after packaging, used to confirm IC function, speed, tolerance, whether the normal power consumption, and therefore, This stage the test items and the complexity of larger than the former, the test machine used is relatively high, the product can be shipped to user action prior to the most important checks on the various plants in IC factory, but also represents the possibility of sustained accumulation of goodwill, not so bad items fall into the hands of customers. This article focuses on analyzing the impact of wafer test yield because, for these reasons to further explore and propose measures to improve the whole process of probing the electrical conductivity, is the probe conducted by the probe card to the chip, contact poor are often the main cause of instability caused by the test, but excessive pressure will cause the chip pin or the aluminum pad damaged. Wafer test probe card is supported by thousands of fine wool, such as hair dressers in the probe, to measure the performance of the circuit wafer on the wafer circuit to detect whether there are flaws. As the VLSI fabrication technology advances, integrated circuits density increases, more to the smaller size of electronic components, is more for the more detailed probe, probe the problem of stress and seriously affect the reliability and lifetime cost of wafer test. As the wear and pollution, probe contact resistance varies with the number of probe gradually increased and performance degradation caused by probes. Therefore probe contact resistance is the main factor affecting probe life.

並列關鍵字

pad tester prober probe card chip probe

參考文獻


[1] 葉漢清,“Construction of Blind-Build W/S Production Flow and Cost Analysis-A Case Study of “A” Company”, 碩士論文,成功大學工管系,第4頁,2007。
[4] 李宜璋,“The Study of MEMS Probes for High-Speed,High-Frequency,and High-Parallel Wafer-Level Testing”,碩士論文,成功大學電機工程系,第4頁,2004。
[8] William R. Mann, Frederick L. Taber, Philip W. Seitzer, and Jerry J. Broz, Ph.D. ,“THE LEADING EDGE OF PRODUCTION WAFER PROBE TEST TECHNOLOGY”
[11] Jerry J. Broz, Ph.D., Point Technologies; Scott Stalnaker, AMI Semiconductor;
and Gene Humphrey, International Test Solutions,“Controlling Contact Resistance”, EE-Evaluation Engineering, May 2004

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