探討不同老化因子對於III-V族三接面太陽能電池之影響

Study of the degradation mechanisms of III-V triple junction solar cells under heating/biasing conditions

江美慧(Mei-Hui Chiang)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2013年)

https://doi.org/10.6840/cycu201300415

摘要

本實驗目的為利用不同的老化因子對於InGaP/InGaAs/Ge 三接面太陽能電池進行加速衰退試驗，進而去分析衰退機制以及得知生命週期。本實驗主要是針對未塗佈光學膠的III-V族化合物聚光型InGaP/InGaAs/Ge太陽能電池進行逐步應力加速衰退試驗(SSADT)，探討其衰退機制及成因。實驗溫度分別為363、383、403和423K，累積時數為25、55、85和135小時。除了所設定之加速衰退試驗條件外，我們更分別注入了三種不同的電流：2A、3A、4A。然而在此實驗中，我們將視為衰退的條件訂為衰退至初始值的90%。並且單獨分析溫度與電流對於InGaP/InGaAs/Ge太陽能電池的個別影響。
經過本實驗，可得知InGaP/InGaAs/Ge太陽能電池經過SSADT溫度條件與電流的加速後，暗電流-電壓曲線的變化明顯看出邊緣複合電流的增加，另一方面藉由光電流-電壓曲線得知開路電壓、短路電流與填充因子呈現逐步下降的現象。以上趨勢與電池的效率變化皆呈現正相關的特性。此外，我們還觀察到，當提供的順向電流越大時，所造成的衰退速度以及衰退數目也會增加。但是在單獨溫度或是單獨電流試驗中，並未有明顯衰退，因此更可以明確地說熱與偏壓會成倍的對InGaP/InGaAs/Ge太陽能電池造成衰退。

關鍵字

III-V三接面太陽能電池 ； 衰退 ； 熱 ； 偏壓 ； 複合電流 ； 逐步應力加速衰退試驗

並列摘要

The purpose of this study is to inspect the degradation mechanism of III-V triple junction solar cells under heating/biasing conditions. In this paper, we present a test model in order to analysis the degradation mechanism in different testing condition of InGaP/InGaAs/Ge triple junction solar cells. Extra injected the forward bias current in step stress accelerated degradation test (SSADT) were conducted on these devices orderly at 363, 383, 403 and 423K for 25, 55, 85 and 135 hours, respectively. We applied three different forward bias currents in 5.5mm × 5.5mm solar cells: 2A, 3A, 4A. It is worth mentioning, the InGaP/InGaAs/Ge triple junction solar cells without coated. We were definition the failure efficiency for a confidence interval of 90%.
After the tests, gradual degradation in the light and dark I-V curves characteristics of the solar cells was observed. The recombination current in the depletion region at the chip perimeter of solar cells, resulting in the decrease of open-circuit voltage (VOC), short-circuit current (Isc) and fill factor (FF) and efficiency, is suggested to be the important degradation mechanism for InGaP/InGaAs/Ge triple junction solar cells. In addition, we also observed the different forward bias current might cause the different rate of degradation, the bigger forward bias current the much failure number in the same condition. However, provide the temperature or current respectively, did not significantly degraded, and therefore can clearly say that the heating and biasing will be multiplied on InGaP / InGaAs / Ge solar cells causing degradation.

並列關鍵字

step stress accelerated degradation tests ； biasing ； heating ； degradation ； III-V triple junction solar cells ； recombination current

參考文獻

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