奈米球結構應用於氧化鎂鋅金半金紫外光光檢測器

本研究主要以原子層沉積系統製作氧化鎂鋅薄膜，將其應用於製作金屬-半導體-金屬紫外光光檢測器，並利用光電化學氧化法於指叉狀電極間成長氫氧化鋅做為護佈層，以減少氧化鎂鋅薄膜之表面態位及懸鍵缺陷，因此可降低元件暗電流及改善元件的低頻雜訊。此外，利用自我組裝技術塗佈二氧化矽奈米球於氧化鎂鋅金半金紫外光光檢測器表面作為抗反射層，以增加光量入射至光檢測器中，藉此提升元件效率。在偏壓5 V時，元件的暗電流由無鈍化處理的1.81×10-9 A降至鈍化處理後的1.53×10-10 A；當入射光波長為340 nm和功率為39.98 μW時，紫外光-可見光拒斥比從無鈍化處理的1.71×103提升至鈍化處理後的5.50×103；而等效雜訊功率從無鈍化處理的6.18×10-13 W降至鈍化處理後的4.27×10-13 W。表面鈍化層護佈與二氧化矽奈米球塗佈的氧化鎂鋅金半金紫外光光檢測器，由於表面鈍化層護佈可減少氧化鎂鋅薄膜之表面態位及二氧化矽奈米球抗反射層的效果，元件的紫外光-可見光拒斥比可從5.50×103提升至1.44×104；等效雜訊功率從4.27×10-13 W降至2.60×10-13 W，而無表面鈍化處理元件、表面鈍化層護佈元件及表面鈍化層護佈與二氧化矽奈米球塗佈之元件的檢測度分別為5.11×1011cmHz1/2W-1、7.39×1011cmHz1/2W-1及1.21×1012cmHz1/2W-1。

關鍵字

氧化鎂鋅；紫外光光檢測器；奈米球塗佈；原子層沉積系統

並列摘要

In this study, atomic layer deposition (ALD) system was used to deposit the Mg0.1Zn0.9O films as the absorption layer of the metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs). The photoelectrochemical (PEC) method was used to form a passivation layer Zn(OH)2 on the surface of the Mg0.1Zn0.9O films, which can reduce the dangling bonds and surface states on the surface of Mg0.1Zn0.9O films, which could reduce the dark current and improve low frequency noise of the Mg0.1Zn0.9O MSM-UPDs. At bias of 5 V, the dark current of the Mg0.1Zn0.9O MSM-UPDs with PEC passivation decreased from 1.81×10-9 A to 1.53×10-10 A; then devices were illuminated by incident light wavelength of 340 nm, and the light power of 39.98 μW, the ultraviolet (UV)-visible rejection ratio increased from 1.71×103 to 5.50×103, and the NEP decreased from 6.18×10-13 W to 4.27×10-13 W. Compared with the MSM-UPDs with the PEC passivation, the UV-visible rejection ratio of the MSM-UPDs with the PEC passivation and silica nanospheres anti-reflection layer could effectively increase from the 5.50×103 to 1.44×104 and the NEP could decrease from 4.27×10-13 W to 2.60×10-13 W. It was attributed to that the surface state and dangling bond were effectively passivated using PEC method, and the amount of incident light was increased by the silica nanospheres anti-reflection layer. The detectivity of the Mg0.1Zn0.9O MSM-UPDs with and without PEC passivation and Mg0.1Zn0.9O MSM-UPDs with PEC passivation and silica nanospheres coating were 5.11×1011cmHz1/2W-1、7.39×1011cmHz1/2W-1及1.21×1012cmHz1/2W-1, respectively.

並列關鍵字

ALD ； ultraviolet photodetector ； nanospheres ； MgZnO

參考文獻

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奈米球結構應用於氧化鎂鋅金半金紫外光光檢測器

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