二氧化鈦薄膜電致色變性質之研究

A Study on the Electrochromic Properties of TiO2 thin films

洪嫣(Yen Hung.)

指導教授 ： 章明

中原大學/工學院/光機電及資電控產業研發碩士專班/碩士(2008年)

https://doi.org/10.6840/cycu200900286

摘要

本實驗利用反應性射頻磁控濺鍍法在ITO玻璃基板上沉積電致色變材料，利用不同的製程參數：薄膜厚度、濺鍍功率及氧氣流量，沉積二氧化鈦(TiO2)薄膜，並使用1M過氯酸鋰(LiClO4)加碳酸丙烯(PC)為電解質液，觀察TiO2薄膜的電化學與電致色變特性。使用X光繞射分析、原子力顯微鏡、紫外光-可見光光譜儀及循環伏安儀進行分析，探討製程條件對TiO2電致色變性質之影響。
由實驗結果得知，本實驗的TiO2薄膜結構均為非晶質(Amorphous)結構。而在薄膜厚度為150 nm時，在波長為550nm之可見光下具有最佳著褪色穿透率差異(ΔT；ΔT＝Tbleached－Tcolored)為15.38 ％及光學密度差(ΔOD)為0.085；當膜厚超過150 nm，則會使ΔT及ΔOD降低。隨著濺鍍功率由0.5 kw增加至2.5 kw，Rms與Ra值會分別由2.561 nm與2.013 nm增加至4.162 nm與3.243 nm；而當功率為2.0 kw時，則會有最佳的ΔT與ΔOD分別為21.97 ％與0.139。氧氣流量對TiO2薄膜的電化學與電致色變特性沒有顯著的影響。故在膜厚150 nm，濺鍍功率2.0 kw，氧氣流量0 sccm之製程條件下製備出的TiO2薄膜，在波長為550 nm可見光下具有最佳ΔT與ΔOD為21.97 ％與0.139，及最大氧化與還原峰值，分別為1.324 mA/cm2與-1.805 mA/cm2。

關鍵字

電致色變 ； 反應性射頻磁控濺鍍 ； 二氧化鈦 ； 光學密度差

並列摘要

In this study, the electrochromic material was deposited on ITO/Glass substrates by using reactively RF magnetron sputtering. Utilize various processing parameters such as the thickness of thin film, sputtering power and oxygen flow to deposited TiO2 thin film, and using the electrolyte of 1M LiClO4 in propylene carbonate (PC) to observe the electrochromic properties of TiO2 thin film. Using the X-ray diffraction spectrometer, atomic force microscope, UV-Vis spectrophotometer, and cyclic voltammetry to analyze and find out the influence of the TiO2 thin film with processing parameters.
As the results, the TiO2 thin film in the experiment were all amorphous. When the thickness was 150 nm, it had the best ΔT (ΔT＝Tbleached－Tcolored) was 15.38%, and the best optical density change (ΔOD) was 0.085 at wavelength 550 nm. If the thickness of TiO2 thin film was over 150 nm, it would reduce the ΔT and ΔOD. With the increase of sputtering power, the Rms would increase from 2.561 nm to 4.162 nm. Then, the Ra would increase from 2.013 nm to 3.243 nm. When the sputtering power was 2.0 kw, the TiO2 thin film had the best ΔT was 21.97 %, and the best ΔOD was 0.139 at wavelength 550 nm. The oxygen flow had no notable influence on the electrochemical behavior of the TiO2 thin film. We made the TiO2 thin film with the optimal conditions such as the oxygen flow of 0sccm, sputtering power of 2.0 kw, thickness of 150 nm, argon flow of 40 sccm. At wavelength 550 nm, it had the best ΔT is 21.97 %, and the best ΔOD is 0.139. Then, it also had the maximum oxidization peak is 1.324 mA/cm2 and the maximum reduction peak is -1.805 mA/cm2.

並列關鍵字

the electrochromic properties ； reactively RF magnetron sputtering ； TiO2 ； optical density change

參考文獻

【1】 謝育忠, “電漿濺鍍電致色變氧化鎳薄膜特性研究與節能評估”, 中原大學化學工程學研究所碩士論文, (2002).

【32】 白木靖寬, “薄膜工程學”,全華科技股份有限公司, (2006).

【33】 羅吉宗, “薄膜科技與應用”, 全華科技股份有限公司, (2005).

【5】 S. A. Agnihotry, and K. K. Saini Subhas Chandra, “Indian Journal of Pure & Applied”, Physics, vol.24, p.19, (1986).

【6】 C. G. Granqvist, E. Avendano, and A. Azens, “Electrochromic coatings and devices: survey of some recent advances”, Thin Solid Films, vol.442, p.201-211, (2003).