隨著光電產業的發展,不斷有新材料被發展出來,透明導電膜即是近年來LCD 產業下的熱門材料,而所謂透明導電膜即是一種吸收紫外光、可見光穿透與反射紅外線的材料,傳統上多使用氧化銦錫(ITO)薄膜,因具有高穿透率且電阻係數低,目前已廣泛應用於電子和光電工業上。但是ITO靶材價格昂貴,但因為其成本高昂,所以一直有新材料想取代它,ZAO 便是一例,在適當條件下可製作出與ITO 相媲美之特性且價格低廉,極具競爭優勢。 本實驗利用直流磁控濺鍍(DC reactive magnetron sputtering)系統來沈積ZAO(ZnO:Al)薄膜於彩色濾光片基板上,濺鍍條件中改變、O2 分壓,以探討製程參數與熱處理間交互作用,對所沈積的ZAO 薄膜之結構與性質的影響,並探討以價格低也具有高穿透率的氧化鋅鋁(ZAO)應用在LCD彩色濾光片的可能性,嘗試得到一導電特性和光學性質可取代ITO之材料。實驗發現同樣製程條件下ZAO薄膜穿透率優於ITO薄膜,而ZAO薄膜穿透率隨膜厚增加而降低,其最大穿透率隨製程氧氣比率增加而增加,穿透度曲線隨製程氧氣比率降低而往短波長區域位移。ZAO薄膜之阻值Rs主要受到退火(anneal)條件影響,在真空下anneal有較低阻值及較佳穿透率,ZAO薄膜之電阻率約為ITO薄膜的2~3倍。
Abstract According to optical industry development. New material will be invented. The transparence of conductive thin film is used in LCD industry lately. It is of one kind material of high transmitting ultraviolet、and visible light that however can reflect the infrared rays. Traditional thin film uses ITO (indium Tin oxide) because of its high transparency and low resistively. Now it is widely applied in electronic and optical industry. Wing to the ITO target cost is very expensive hence a new material ZAO is desired Under some conditions, ZAO can be fabricated with the same property approaching ITO thin film. It has in future advantage over competition in optoelectronic application. Aluminum-doped zinc oxide films grown on CF(Color filter) have been prepared by DC reactive magnetron sputtering from metallic targets with different oxygen partial pressures at room temperature. A series of optical, electrical, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by using spectroscopy, X-ray diffraction, SEM, AFM and I/V conductivity measurements. The X-ray diffraction studies revealed that both as-deposited and annealed ZAO films have preferred orientation to wurtzite structure. Films with 2% Al dopant concentration after annealing at 220°c can obtain a minimum resistivity of 4.39×10-2Ωcm. All deposited ZAO films can reach as high transparency as 85~95%. Besides, both oxygen partial pressures dominate the grain size, surface morphology and crystallinity have also been examined.. It was found that the transmission coefficient of ZAO is better than that of ITO and decreases with increasing thickness of film and shifts to short wavelength with lowering oxygen partial pressure. In high vacuum ambient, IAO thin film however revealed a lower resisitivity and as high transmission coefficient as 2~3 times of traditional ITO. It’s surface resistance Rs if dominantly influent on annealing parameters.