以電漿輔助式分子束磊晶法成長砷掺雜之P型氧化鋅薄膜及其特性分析

Growth and characteristics of As-doped p-type ZnO films by plasma-assisted molecular beam epitaxy

黃柏盛(bo-sheng Huang)

指導教授 ： 王智祥

中原大學/理學院/應用物理研究所/碩士(2008年)

https://doi.org/10.6840/cycu200800291

摘要

中文摘要

本論文運用電漿輔助式分子束磊晶技術，在450 ℃的環境中，直接於三氧化二鋁基板上成長掺雜砷之p型氧化鋅。而掺雜砷之氧化鋅薄膜中砷溫度藉由不同砷分子束源的溫度來控制 我們由霍爾量測得知掺雜砷之氧化鋅的電阻率( resistivity)、遷移率(mobility)及載子濃度(carrier concentration) ，以及使用光激螢光光譜量測其光學特性，並由原子力顯微鏡觀察樣品之表面形貌。本文主要探討在不同長晶條件下的霍爾數據，首先先藉由在不同鋅跟氧比例下的霍爾數據，討論了氧化鋅中形成p型的模型，並在此條件下改變砷的溫度，探討霍爾數據的變化，並在充滿氮氣的腔體中對其熱退火700 ℃、800 ℃、900 ℃十分鐘，觀察在不同熱退火溫度下其霍爾數據的變化。研究結果顯示，砷250 ℃的掺雜，可以讓本質n type的氧化鋅薄膜，轉變成 p type的氧化鋅薄膜。此外 我們也發現，掺雜適量的Mn，使得樣品有較好的熱穩定性。由低溫光激螢光光譜圖中，比較D0X跟A0X兩支peak的比例，並與霍爾載子濃度做比較。

關鍵字

p型氧化鋅 ； 砷?雜

並列摘要

Abstract
As-doped p-type ZnO films were grown on Al2O3 using plasma assisted molecular beam epitaxy at growth temperature of 450 ℃. The concentration of As was varied through varying the temperature of As cell. Hall measurement was employed to determine the resistivity, mobility and carrier concentration. Photoluminescence and atomic force microscopy (AFM) were used to characterize the optical properties and surface morphology, respectively . The Hall measurement results related to the growth conditions and annealing temperature has been investigated, and the model of formation of p-type ZnO has been discussed. According the results, we find that the native n-type ZnO films were converted to p-type behavior for As cell temperature of 250℃. Moreover, we discovered the Mn-doped p-type ZnO films having good thermal stability, and discussed the relation between the PL spectra and the carrier concentraion.

並列關鍵字

As-doped ； p-type ZnO

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