孔隙性材料在超級電容與低介電材料的應用

Porosity material applied in supercapacitors and low dielectric materials

鄭惠如(Huei-Ju Cheng)

指導教授 ： 葉瑞銘

中原大學/理學院/化學研究所/碩士(2016年)

https://doi.org/10.6840/cycu201600620

摘要

本論文分成兩大部分，第一部分是將千年芋樹葉碳化成多孔材料，再經由活化後製作超級電容中的電極材料，之後使用1M H2SO4電解液測試材料的電化學特性。從掃描式電子顯微鏡（SEM）與穿透式電子顯微鏡（TEM）顯示經過活化後的樹葉比碳化樹葉的孔洞數多，再利用孔洞及表面積分析儀（BET）證實活化樹葉的比表面積比碳化樹葉高3倍。在電容測試中，在 1M H2SO4水溶液環境下活化樹葉的電容值為131.11 F/g，與碳化樹葉相比提升將近200%。在充放電測試中得知活化樹葉還能保有良好的電容值，而在最後的阻抗測試中，證實在1M H2SO4水溶液環境下活化樹葉的阻抗比較小。
而第二部分，主要是將微米聚亞醯胺中空球導入至聚亞醯胺中並製備成同時具有低介電與高絕熱材料。首先利用溶膠凝膠法合成氨基改質二氧化矽微米粒子（AMS），並使用傅立葉轉換紅外線光譜儀（FT-IR）、固態核磁共振儀（13CNMR、29SiNMR）確定已成功合成氨基改質二氧化矽粒子。接著利用高分子聚合反應將酸酐與硬化劑聚合於二氧化矽表層，再用氫氟酸溶液去除AMS後得到微米聚亞醯胺中空球（HPS），而鑑定部分則是使用掃描式電子顯微鏡（SEM）與熱失重分析儀（TGA）鑑定微米聚亞醯胺中空球的形態以及熱性質。之後將HPS加入聚亞醯胺中形成多孔型複合薄膜，從SEM可觀察出高含量的HPS均勻分散在基材中。此外，利用紫外光可見光光譜儀（UV-Visible）判別薄膜透光程度得知HPS含量越高透光度將會降低。熱性質中，從TGA與DSC可以得知添加HPS在薄膜中並不會影響材料的熱裂解溫度與玻璃轉換溫度。而在熱傳導率的部分，可知最低值是在添加10wt% HPS的複合薄膜其熱導係數為0.09874 W/mK，最後在介電常數上受到高分子本身影響，因此再添加15wt% HPS時介電常數為3.25最低。

關鍵字

超級電容 ； 碳化樹葉 ； 低介電材料 ； 聚亞醯胺

並列摘要

There were two parts in this thsis. One part described that Xanthosoma Sagittifolium leaves carbonized into porous materials, and then this materials were reprocessed by activation to produce the electrode material in supercapacitor. First of all, scanning electron microscope （SEM） and transmission electron microscopy （TEM） displayed that activated leaves were more holes than carbonized leaves, and surface area and pore analyzer （BET） demonstrated the specific surface area of activated leaves were 3 times higher than carbonized leaves. In the capacitor tests, the capacitance values of activated leaves was 131.11 F/g at 1M H2SO4 in 5 mV/s scan rate, which was more raise than carbonized leaf nearly 200%. In the charge-discharge test that activated leaves maintained good capacitance values, and it was also confirmed relatively small impedance in 1M H2SO4.
The others part was that hollow polyimide sphere incorporated into polyimide and applied on the low dielectric and high insulating materials. First of all, synthesis of amino-modified silica （AMS） particles was prepared by using sol-gel method. Then, as-prepared was identified by using fourier transform infrared spectroscopy （FT-IR）, and solid state nuclear magnetic resonance spectrometer （13CNMR, 29SiNMR）. AMS was incorporated into polyimide polymerization to form the PI shell on the AMS surface. Moreover, using etching method hollow polyimide sphere were obtained, and identification of the material form was used of SEM and thermo-gravimetric analysis （TGA）. Next hollow polyimide spheres were added into polyimide, SEM can be observed from the high content of HPS uniformly dispersed in the substrate, and Ultraviolet-Visible spectrophotometer （UV-Visible） created more HPS content that the transmittance will reduce. Part of the thermal stability, it identified that adding HPS did not affect, compared with pure PI. In the thermal properties, it can be learned from TGA and DSC that added HPS in the film and did not affect materials decomposed temperature and glass transition temperature. In the thermal conductivity, it found that the lowest value was the 10 wt% HPS composite film which the thermal conductivity coefficient was 0.09874 W / mK. Finally, the dielectric constant of 3.25 on 15wt% HPS composite film by the lowest impact on the dielectric constant of the polymer itself.

並列關鍵字

supercapacitors ； carbonized leaves ； low dielectric materials ； polyimide

參考文獻

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