熱電子注入對非重疊佈植記憶元件之資料保存能力研究

Study on NOI Memory Device Retention under Hot Electron Injection

何家瑋(Chia-Wei Ho)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2010年)

https://doi.org/10.6840/cycu201001000

摘要

半導體製程技術的精進使得半導體非揮發性記憶體亦逐年在進步。隨著元件的微縮，具功率消耗低、元件密度高、操作速度快、且相容於CMOS邏輯製程的記憶元件將是未來發展的趨勢。
本論文以熱電子對新型非重疊式離子植入金氧半場效電晶體之資料保存為研究主題，此記憶元件的寫入係利用通道熱電子注入，並以兩側壁區作為個別位元儲存之區域。透過Arrhenius equation 預測不同溫度下的保存時間。並利用實際量測的電荷幫浦(Charge Pumping)方式計算出電荷流失之情況，最後，透過藉由改變寫入電壓去探討，不同寫入電壓對於資料保存的影響。

關鍵字

資料保存 ； 非揮發性記憶體

並列摘要

The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories.
This work explores the data retention of trapped electrons in the Non-overlapped Implantation (NOI) MOSFETs. As potential non-volatile memories, the NOI devices can be programmed by channel hot electron injection. By Arrhenius equation, the charge loss with time has been modeled and predicted under elevated temperatures. The charge loss in the nitride was also measured using a modified charge pumping method. Data retention characteristics with different programming conditions were studied. Finally, the trend of charge loss in the NOI devices is affected by different program biases.

並列關鍵字

NVM ； Data retention

參考文獻

Chapter 1

[1-1] W. D. Brown, and J. E. Brewer, Nonvolatile Semiconductor Memory Technology, IEEE Press, 1998.

[1-3] W. D. Brown, and J. E. Brewer, Nonvolatile Semiconductor Memory Technology, IEEE Press, 1998.

[1-5] K. Wu, C. S. Pan, J. J. Shaw, P. Freiberger, and G. Sery, “A Model for EPROM Intrinsic Charge Loss through Oxide-Nitride-Oxide (ONO) Interpoly Dielectric,” Proc. IRPS, p.145, 1990.

[2-4] E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, “Characterization of Channel Hot Electron Injection by the Subthreshold Slop of NROMTM Device”, IEEE Electron Device Lett., Vol.22, p.556, 2001.