３－１２ＧＨｚ雙共振超寬頻低雜訊放大器分析與實現

The Analysis and Realization of 3-12GHz Ultra-Wideband Low Noise Amplifier by Dual-Resonance

楊士賢(Shih-Hsien Yang)

指導教授 ： 陳淳杰

中原大學/電機資訊學院/電子工程研究所/碩士(2020年)

https://doi.org/10.6840/cycu202000195

摘要

本論文所設計之低雜訊放大器主要應用於3.1GHz~10.6GHz的超寬頻(UWB)，並希望繼續擴展頻寬到12GHz，使3~12GHz頻率內的訊號都能使用此低雜訊放大器。
　　本論文採用台積電0.18 μm RFCMOS製程設計高增益的超寬頻低雜訊放大器（UWB LNA）。利用雙共振與電感串聯峰值技術擴展其頻率響應，並維持一定的功率增益、輸入阻抗匹配與雜訊指數。所設計之低雜訊放大器在3-12GHz的頻段中，在1.5V電源電壓的功率消耗值為12.03mW，其功率增益和雜訊指數分別13.2±1.5 dB與4.06±0.4 dB，輸入阻抗匹配(S11)與輸出阻抗匹配(S22)皆為小於-10dB。

關鍵字

低雜訊放大器 ； 超寬頻 ； 雙共振

並列摘要

The design of low noise amplifier in this paper is used in the ultra-wideband (UWB) of 3.1GHz to 10.6GHz, and hopes to continue to expand the bandwidth to 12GHz, so that signals in the frequency range of 3~12GHz can use this low noise amplifier.
　　A high power gain of ultra-wideband low noise amplifier based on TSMC 0.18 μm RFCMOS process is reported in this paper. It uses double resonance and inductive-series peaking technology to extend its frequency response and maintain power gain, input impedance matching and noise figure (NF). This designed has a power consumption value of 12.03mW at a 1.5V supply voltage in the 3-12GHz frequency band. Its power gain and noise figure are 13.2 ± 1.5 dB and 4.06 ± 0.4 dB. The input impedance matching (S11) and the output impedance matching (S22) are both less than -10dB.

並列關鍵字

Low noise amplifier(LNA) ； ultra-wideband(UWB) ； dual-resonance

參考文獻

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